Non-aqueous solution-processed phosphorene by controlled low-potential electrochemical exfoliation and thin film preparation
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F20%3A43920375" target="_blank" >RIV/60461373:22310/20:43920375 - isvavai.cz</a>
Výsledek na webu
<a href="https://pubs.rsc.org/ko/content/articlehtml/2020/nr/c9nr10257d" target="_blank" >https://pubs.rsc.org/ko/content/articlehtml/2020/nr/c9nr10257d</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1039/c9nr10257d" target="_blank" >10.1039/c9nr10257d</a>
Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
Non-aqueous solution-processed phosphorene by controlled low-potential electrochemical exfoliation and thin film preparation
Popis výsledku v původním jazyce
Black phosphorus (BP) in its monolayer form called phosphorene is thought of as a successor of graphene and is of great interest for (opto)electronic applications. A quantitative and scalable method for the synthesis of (mono-)few-layer phosphorene has been an outstanding challenge due to the process irreproducibility and environmental degradation capability of the BP. Here, we report a facile controlled electrochemical exfoliation method for the preparation of a few-layer phosphorene (FP) with nearly 100% yield. Our approach relies on the low-potential influence in anhydrous and oxygen-free low-boiling acetonitrile (AN) and N,N-dimethylformamide (DMF) using alkylammonium ions. Herein, intercalation of positive ions into BP interlayers occurred with a minimum potential of -2.95 V in DMF and -2.85 V in AN and the non-damaging and highly accurate electrochemical exfoliation lasted at -3.8 V. A variety of analytical methods have revealed that in particular DMF-based exfoliation results in high-quality phosphorene of 1-5 layers with good crystallinity and lateral sizes up to tens of micrometers. Moreover, assurance of the oxygen- and water-free environment allowed us to minimize the surface oxidation of BP and, consequently, exfoliated phosphorene. We pioneer an effective and reproducible printing transfer of electrochemically exfoliated phosphorene films onto various flexible and rigid substrates. The surfactant-free process of exfoliation allowed assembly and transfer of thin films based on FP. The phosphorene-based films characterized as direct gap semiconductors have a layer-number-dependent bandgap with a tuning range larger than that of other 2D materials. We show that on varying the films' thickness, it is possible to modify their optical properties, which is a significant advantage for compact and switchable optoelectronic components. © 2020 The Royal Society of Chemistry.
Název v anglickém jazyce
Non-aqueous solution-processed phosphorene by controlled low-potential electrochemical exfoliation and thin film preparation
Popis výsledku anglicky
Black phosphorus (BP) in its monolayer form called phosphorene is thought of as a successor of graphene and is of great interest for (opto)electronic applications. A quantitative and scalable method for the synthesis of (mono-)few-layer phosphorene has been an outstanding challenge due to the process irreproducibility and environmental degradation capability of the BP. Here, we report a facile controlled electrochemical exfoliation method for the preparation of a few-layer phosphorene (FP) with nearly 100% yield. Our approach relies on the low-potential influence in anhydrous and oxygen-free low-boiling acetonitrile (AN) and N,N-dimethylformamide (DMF) using alkylammonium ions. Herein, intercalation of positive ions into BP interlayers occurred with a minimum potential of -2.95 V in DMF and -2.85 V in AN and the non-damaging and highly accurate electrochemical exfoliation lasted at -3.8 V. A variety of analytical methods have revealed that in particular DMF-based exfoliation results in high-quality phosphorene of 1-5 layers with good crystallinity and lateral sizes up to tens of micrometers. Moreover, assurance of the oxygen- and water-free environment allowed us to minimize the surface oxidation of BP and, consequently, exfoliated phosphorene. We pioneer an effective and reproducible printing transfer of electrochemically exfoliated phosphorene films onto various flexible and rigid substrates. The surfactant-free process of exfoliation allowed assembly and transfer of thin films based on FP. The phosphorene-based films characterized as direct gap semiconductors have a layer-number-dependent bandgap with a tuning range larger than that of other 2D materials. We show that on varying the films' thickness, it is possible to modify their optical properties, which is a significant advantage for compact and switchable optoelectronic components. © 2020 The Royal Society of Chemistry.
Klasifikace
Druh
J<sub>imp</sub> - Článek v periodiku v databázi Web of Science
CEP obor
—
OECD FORD obor
10402 - Inorganic and nuclear chemistry
Návaznosti výsledku
Projekt
<a href="/cs/project/GX19-26910X" target="_blank" >GX19-26910X: Chemie ve dvou dimenzích - za hranice grafenu</a><br>
Návaznosti
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Ostatní
Rok uplatnění
2020
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Údaje specifické pro druh výsledku
Název periodika
Nanoscale
ISSN
2040-3364
e-ISSN
—
Svazek periodika
12
Číslo periodika v rámci svazku
4
Stát vydavatele periodika
GB - Spojené království Velké Británie a Severního Irska
Počet stran výsledku
10
Strana od-do
2638-2647
Kód UT WoS článku
000517839900042
EID výsledku v databázi Scopus
2-s2.0-85078693279