Electrochemically exfoliated phosphorene nanosheet thin films for wafer-scale near-infrared phototransistor array

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F22%3A43924203" target="_blank" >RIV/60461373:22310/22:43924203 - isvavai.cz</a>

Výsledek na webu

<a href="https://www.nature.com/articles/s41699-022-00360-2" target="_blank" >https://www.nature.com/articles/s41699-022-00360-2</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1038/s41699-022-00360-2" target="_blank" >10.1038/s41699-022-00360-2</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Electrochemically exfoliated phosphorene nanosheet thin films for wafer-scale near-infrared phototransistor array

Popis výsledku v původním jazyce

Two-dimensional (2D) black phosphorus (BP), or phosphorene, has recently emerged as a promising 2D semiconductor because of its p-type charge transport behavior and near-infrared photoresponsivity. However, the application of BP in practical electronic and optoelectronic devices is hindered by challenges in producing high-quality BP films over large areas. In this manuscript, we present a facile solution-based process to create wafer-scale BP films for fabrication of p-channel field-effect transistors that are responsive to near infrared light. Few-layer BP nanosheets are first exfoliated from the bulk crystal via electrochemical intercalation of cationic molecules and then vacuum-filtered through an anodic aluminum oxide membrane. The resulting BP film can be transferred onto an SiO2-coated silicon substrate, thereby allowing for realization of field-effect transistors after electrode deposition and thermal annealing. The transistor array exhibits spatial uniformity in electrical performance with an average hole mobility of similar to 0.002 cm(2) V-1 s(-1) and on/off ratio of 130. Furthermore, gate-induced modulation of the BP channel allows for enhancement in the photoresponsivity for 1550-nm light illumination up to 24 mA W-1, which benefits the application of the phototransistor array for near infrared imaging.

Název v anglickém jazyce

Electrochemically exfoliated phosphorene nanosheet thin films for wafer-scale near-infrared phototransistor array

Popis výsledku anglicky

Two-dimensional (2D) black phosphorus (BP), or phosphorene, has recently emerged as a promising 2D semiconductor because of its p-type charge transport behavior and near-infrared photoresponsivity. However, the application of BP in practical electronic and optoelectronic devices is hindered by challenges in producing high-quality BP films over large areas. In this manuscript, we present a facile solution-based process to create wafer-scale BP films for fabrication of p-channel field-effect transistors that are responsive to near infrared light. Few-layer BP nanosheets are first exfoliated from the bulk crystal via electrochemical intercalation of cationic molecules and then vacuum-filtered through an anodic aluminum oxide membrane. The resulting BP film can be transferred onto an SiO2-coated silicon substrate, thereby allowing for realization of field-effect transistors after electrode deposition and thermal annealing. The transistor array exhibits spatial uniformity in electrical performance with an average hole mobility of similar to 0.002 cm(2) V-1 s(-1) and on/off ratio of 130. Furthermore, gate-induced modulation of the BP channel allows for enhancement in the photoresponsivity for 1550-nm light illumination up to 24 mA W-1, which benefits the application of the phototransistor array for near infrared imaging.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10402 - Inorganic and nuclear chemistry

Projekt

<a href="/cs/project/LL2101" target="_blank" >LL2101: Příští Generace Monoelementárních 2D Materiálů</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2022

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

NPJ 2D MATERIALS AND APPLICATIONS

ISSN

2397-7132

e-ISSN

2397-7132

Svazek periodika

6

Číslo periodika v rámci svazku

1

Stát vydavatele periodika

DE - Spolková republika Německo

Počet stran výsledku

8

Strana od-do

nestrankovano

Kód UT WoS článku

000884881400001

EID výsledku v databázi Scopus

2-s2.0-85141933641