Intrinsic carrier multiplication in layered Bi2O2Se avalanche photodiodes with gain bandwidth product exceeding 1 GHz

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F21%3A43920437" target="_blank" >RIV/60461373:22310/21:43920437 - isvavai.cz</a>

Výsledek na webu

<a href="https://link.springer.com/article/10.1007/s12274-020-3059-3" target="_blank" >https://link.springer.com/article/10.1007/s12274-020-3059-3</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1007/s12274-020-3059-3" target="_blank" >10.1007/s12274-020-3059-3</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Intrinsic carrier multiplication in layered Bi2O2Se avalanche photodiodes with gain bandwidth product exceeding 1 GHz

Popis výsledku v původním jazyce

Emerging layered semiconductors present multiple advantages for optoelectronic technologies including high carrier mobilities, strong light-matter interactions, and tunable optical absorption and emission. Here, metal-semiconductor-metal avalanche photodiodes (APDs) are fabricated from Bi2O2Se crystals, which consist of electrostatically bound [Bi2O2](2+) and [Se](2-) layers. The resulting APDs possess an intrinsic carrier multiplication factor up to 400 at 7 K with a responsivity gain exceeding 3,000 A/W and bandwidth of similar to 400 kHz at a visible wavelength of 515.6 nm, ultimately resulting in a gain bandwidth product exceeding 1 GHz. Due to exceptionally low dark currents, Bi2O2Se APDs also yield high detectivities up to 4.6 x 10(14) Jones. A systematic analysis of the photocurrent temperature and bias dependence reveals that the carrier multiplication process in Bi2O2Se APDs is consistent with a reverse biased Schottky diode model with a barrier height of similar to 44 meV, in contrast to the charge trapping extrinsic gain mechanism that dominates most layered semiconductor phototransistors. In this manner, layered Bi2O2Se APDs provide a unique platform that can be exploited in a diverse range of high-performance photodetector applications.

Název v anglickém jazyce

Intrinsic carrier multiplication in layered Bi2O2Se avalanche photodiodes with gain bandwidth product exceeding 1 GHz

Popis výsledku anglicky

Emerging layered semiconductors present multiple advantages for optoelectronic technologies including high carrier mobilities, strong light-matter interactions, and tunable optical absorption and emission. Here, metal-semiconductor-metal avalanche photodiodes (APDs) are fabricated from Bi2O2Se crystals, which consist of electrostatically bound [Bi2O2](2+) and [Se](2-) layers. The resulting APDs possess an intrinsic carrier multiplication factor up to 400 at 7 K with a responsivity gain exceeding 3,000 A/W and bandwidth of similar to 400 kHz at a visible wavelength of 515.6 nm, ultimately resulting in a gain bandwidth product exceeding 1 GHz. Due to exceptionally low dark currents, Bi2O2Se APDs also yield high detectivities up to 4.6 x 10(14) Jones. A systematic analysis of the photocurrent temperature and bias dependence reveals that the carrier multiplication process in Bi2O2Se APDs is consistent with a reverse biased Schottky diode model with a barrier height of similar to 44 meV, in contrast to the charge trapping extrinsic gain mechanism that dominates most layered semiconductor phototransistors. In this manner, layered Bi2O2Se APDs provide a unique platform that can be exploited in a diverse range of high-performance photodetector applications.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10402 - Inorganic and nuclear chemistry

Projekt

<a href="/cs/project/LTAUSA19034" target="_blank" >LTAUSA19034: Dvoudimenzionální nanomateriály pro aplikace v elektronice</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2021

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Nano Research

ISSN

1998-0124

e-ISSN

—

Svazek periodika

14

Číslo periodika v rámci svazku

6

Stát vydavatele periodika

CN - Čínská lidová republika

Počet stran výsledku

6

Strana od-do

1961-1966

Kód UT WoS článku

000571200800001

EID výsledku v databázi Scopus

2-s2.0-85090987384