Strain-induced structural and electronic modulation in gas-phase CVD-grown monolayer MoS2 films

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F25%3A43932226" target="_blank" >RIV/60461373:22310/25:43932226 - isvavai.cz</a>

Výsledek na webu

<a href="https://link.springer.com/article/10.1007/s10854-025-15200-4" target="_blank" >https://link.springer.com/article/10.1007/s10854-025-15200-4</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1007/s10854-025-15200-4" target="_blank" >10.1007/s10854-025-15200-4</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Strain-induced structural and electronic modulation in gas-phase CVD-grown monolayer MoS2 films

Popis výsledku v původním jazyce

Atomically-thin transition metal dichalcogenides (TMDs) are promising for next-generation flexible electronic devices. Understanding their mechanical behaviour under applied strain is key for practical applications. In this work, we investigated the strain-induced structural and electronic changes in continuous monolayer MoS2 grown by gas-phase chemical vapor deposition. Raman and photoluminescence spectroscopy are employed to in-situ study the MoS2 layers transferred on polycarbonate substrates with PMMA encapsulation. A correlative plot of Raman modes allowed us to distinguish whether changes in both encapsulated and non-encapsulated films are due to strain or n-type doping. The findings highlight the strain sensitivity of monolayer MoS2 and its potential for flexible electronics, offering critical knowledge for developing robust, strain-tolerant devices using gas-phase CVD-grown 2D TMDs.

Název v anglickém jazyce

Strain-induced structural and electronic modulation in gas-phase CVD-grown monolayer MoS2 films

Popis výsledku anglicky

Atomically-thin transition metal dichalcogenides (TMDs) are promising for next-generation flexible electronic devices. Understanding their mechanical behaviour under applied strain is key for practical applications. In this work, we investigated the strain-induced structural and electronic changes in continuous monolayer MoS2 grown by gas-phase chemical vapor deposition. Raman and photoluminescence spectroscopy are employed to in-situ study the MoS2 layers transferred on polycarbonate substrates with PMMA encapsulation. A correlative plot of Raman modes allowed us to distinguish whether changes in both encapsulated and non-encapsulated films are due to strain or n-type doping. The findings highlight the strain sensitivity of monolayer MoS2 and its potential for flexible electronics, offering critical knowledge for developing robust, strain-tolerant devices using gas-phase CVD-grown 2D TMDs.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10402 - Inorganic and nuclear chemistry

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2025

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

ISSN

0957-4522

e-ISSN

1573-482X

Svazek periodika

36

Číslo periodika v rámci svazku

18

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

9

Strana od-do

nestránkováno

Kód UT WoS článku

001515170300004

EID výsledku v databázi Scopus

2-s2.0-105008780996