Complementary Doping Strategy for Achieving Low Contact-Resistance in p-Type Two-Dimensional Field-Effect Transistors

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F25%3A43932957" target="_blank" >RIV/60461373:22310/25:43932957 - isvavai.cz</a>

Výsledek na webu

<a href="https://pubs.acs.org/doi/abs/10.1021/acs.nanolett.5c04245" target="_blank" >https://pubs.acs.org/doi/abs/10.1021/acs.nanolett.5c04245</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1021/acs.nanolett.5c04245" target="_blank" >10.1021/acs.nanolett.5c04245</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Complementary Doping Strategy for Achieving Low Contact-Resistance in p-Type Two-Dimensional Field-Effect Transistors

Popis výsledku v původním jazyce

Lowering contact resistance (R C) is essential for achieving high-performance complementary logic circuits based on two-dimensional (2D) field-effect transistors (FETs). Although n-type 2D FETs have reached sub-100 Omega&lt;middle dot&gt;mu m R C, attaining a similar performance in p-type devices remains difficult due to large Schottky barriers for hole injection. We present a strategy to reduce R C in p-type monolayer WSe2 FETs to the sub-k Omega&lt;middle dot&gt;mu m range by combining complementary doping with a clean 2D/2D van der Waals (vdW) interface. Degenerately Ta-doped multilayer MoSe2 acts as a robust p-type contact and is laminated onto the MOCVD-grown WSe2 channels. A postfabrication NO anneal induces selective channel doping through NO chemisorption at Se-vacancy sites while preserving the Ta-doped MoSe2 contact properties. This combined channel and contact engineering enable efficient hole injection, yielding I ON values up to 53 mu A/mu m. The approach narrows the performance gap between n- and p-type 2D transistors and advances the prospects for complementary 2D logic technologies.

Název v anglickém jazyce

Complementary Doping Strategy for Achieving Low Contact-Resistance in p-Type Two-Dimensional Field-Effect Transistors

Popis výsledku anglicky

Lowering contact resistance (R C) is essential for achieving high-performance complementary logic circuits based on two-dimensional (2D) field-effect transistors (FETs). Although n-type 2D FETs have reached sub-100 Omega&lt;middle dot&gt;mu m R C, attaining a similar performance in p-type devices remains difficult due to large Schottky barriers for hole injection. We present a strategy to reduce R C in p-type monolayer WSe2 FETs to the sub-k Omega&lt;middle dot&gt;mu m range by combining complementary doping with a clean 2D/2D van der Waals (vdW) interface. Degenerately Ta-doped multilayer MoSe2 acts as a robust p-type contact and is laminated onto the MOCVD-grown WSe2 channels. A postfabrication NO anneal induces selective channel doping through NO chemisorption at Se-vacancy sites while preserving the Ta-doped MoSe2 contact properties. This combined channel and contact engineering enable efficient hole injection, yielding I ON values up to 53 mu A/mu m. The approach narrows the performance gap between n- and p-type 2D transistors and advances the prospects for complementary 2D logic technologies.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10400 - Chemical sciences

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2025

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

NANO LETTERS

ISSN

1530-6984

e-ISSN

1530-6992

Svazek periodika

26

Číslo periodika v rámci svazku

4

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

10

Strana od-do

nestránkováno

Kód UT WoS článku

001645334200001

EID výsledku v databázi Scopus

2-s2.0-105029193184