High-performance p-type field-effect transistors using substitutional doping and thickness control of two-dimensional materials

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F25%3A43930181" target="_blank" >RIV/60461373:22310/25:43930181 - isvavai.cz</a>

Výsledek na webu

<a href="https://www.nature.com/articles/s41928-024-01265-2" target="_blank" >https://www.nature.com/articles/s41928-024-01265-2</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1038/s41928-024-01265-2" target="_blank" >10.1038/s41928-024-01265-2</a>

Jazyk výsledku

angličtina

Název v původním jazyce

High-performance p-type field-effect transistors using substitutional doping and thickness control of two-dimensional materials

Popis výsledku v původním jazyce

In silicon field-effect transistors (FETs), degenerate doping of the channel beneath the source and drain regions is used to create high-performance n- and p-type devices by reducing the contact resistance. Two-dimensional semiconductors have, in contrast, relied on metal-work-function engineering. This approach has led to the development of effective n-type 2D FETs due to the Fermi-level pinning occurring near the conduction band, but it is challenging with p-type FETs. Here we show that the degenerate p-type doping of molybdenum diselenide and tungsten diselenide-achieved through substitutional doping with vanadium, niobium and tantalum-can reduce the contact resistance to as low as 95 ohm mu m in multilayers. This, though, comes at the cost of poor electrostatic control, and we find that the doping effectiveness-and its impact on electrostatic control-is reduced in thinner layers due to strong quantum confinement effects. We, therefore, develop a high-performance p-type 2D molybdenum diselenide FET using a layer-by-layer thinning method to create a device with thin layers at the channel and thick doped layers at the contact regions. Substitutionally doped two-dimensional diselenides can be used to make p-type field-effect transistors with reduced contact resistance and good electrostatic control by varying the thickness of the channel and contact regions.

Název v anglickém jazyce

High-performance p-type field-effect transistors using substitutional doping and thickness control of two-dimensional materials

Popis výsledku anglicky

In silicon field-effect transistors (FETs), degenerate doping of the channel beneath the source and drain regions is used to create high-performance n- and p-type devices by reducing the contact resistance. Two-dimensional semiconductors have, in contrast, relied on metal-work-function engineering. This approach has led to the development of effective n-type 2D FETs due to the Fermi-level pinning occurring near the conduction band, but it is challenging with p-type FETs. Here we show that the degenerate p-type doping of molybdenum diselenide and tungsten diselenide-achieved through substitutional doping with vanadium, niobium and tantalum-can reduce the contact resistance to as low as 95 ohm mu m in multilayers. This, though, comes at the cost of poor electrostatic control, and we find that the doping effectiveness-and its impact on electrostatic control-is reduced in thinner layers due to strong quantum confinement effects. We, therefore, develop a high-performance p-type 2D molybdenum diselenide FET using a layer-by-layer thinning method to create a device with thin layers at the channel and thick doped layers at the contact regions. Substitutionally doped two-dimensional diselenides can be used to make p-type field-effect transistors with reduced contact resistance and good electrostatic control by varying the thickness of the channel and contact regions.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10402 - Inorganic and nuclear chemistry

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2025

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Nature Electronics

ISSN

2520-1131

e-ISSN

—

Svazek periodika

8

Číslo periodika v rámci svazku

January 2025

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

22

Strana od-do

24-35

Kód UT WoS článku

001348685800002

EID výsledku v databázi Scopus

2-s2.0-85208231242