Performance improvement of MoS2/graphene heterostructures based FET by tuning mobility and threshold voltage using APTES

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F25%3A43930191" target="_blank" >RIV/60461373:22310/25:43930191 - isvavai.cz</a>

Výsledek na webu

<a href="https://www.sciencedirect.com/science/article/pii/S0921510724006263#fr3323" target="_blank" >https://www.sciencedirect.com/science/article/pii/S0921510724006263#fr3323</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.mseb.2024.117797" target="_blank" >10.1016/j.mseb.2024.117797</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Performance improvement of MoS2/graphene heterostructures based FET by tuning mobility and threshold voltage using APTES

Popis výsledku v původním jazyce

2D materials have been intensively explored because of their remarkable electrical properties, with a special focus devoted to the fabrication of lateral heterostructures. Two-dimensional materials like molybdenum disulphide (MoS2) have been shown to make field effect transistors (FETs) with high current on–off ratios. However, carrier mobility in back gate MoS2 FETs is often low (0.5–20 cm2/Vs), which limits the overall device performance. Here, we report a novel low Schottky barrier transistor based on graphene, MoS2 and Self-assembled monolayer (SAMS) that utilizes vertical heterostructures in which the channel is composed of MoS2/graphene vertical heterostructures that uses graphene as the electrodes. Self-assembled monolayers of Aminopropyltriethoxysilane (APTES) serve a dual purpose, used for passivation and as an n-type dopant for MoS2, significantly improving the electrical properties. Our experimental and theoretical results show that, with the deposition of APTES on the substrate, there is an increase in mobility from 103 to 135 cm2/Vs, along with the reduction in the threshold voltage from 5.04 to 1.05 V, which is attributed to APTES passivation, which prevents electron trapping and de-trapping, a significant factor determining variation in threshold voltage (ΔVTH). Density functional theory (DFT) calculations support the experimental results and demonstrate that the introduction of APTES doping in MoS2 induces n-type doping in the material, hence improving the performance of the device. The combination of graphene electrodes along with the APTES passivation on substrate holds the promise for reliable and efficient synaptic applications in neuromorphic computing technologies, as well as next-generation complementary logic devices. © 2024 Elsevier B.V.

Název v anglickém jazyce

Performance improvement of MoS2/graphene heterostructures based FET by tuning mobility and threshold voltage using APTES

Popis výsledku anglicky

2D materials have been intensively explored because of their remarkable electrical properties, with a special focus devoted to the fabrication of lateral heterostructures. Two-dimensional materials like molybdenum disulphide (MoS2) have been shown to make field effect transistors (FETs) with high current on–off ratios. However, carrier mobility in back gate MoS2 FETs is often low (0.5–20 cm2/Vs), which limits the overall device performance. Here, we report a novel low Schottky barrier transistor based on graphene, MoS2 and Self-assembled monolayer (SAMS) that utilizes vertical heterostructures in which the channel is composed of MoS2/graphene vertical heterostructures that uses graphene as the electrodes. Self-assembled monolayers of Aminopropyltriethoxysilane (APTES) serve a dual purpose, used for passivation and as an n-type dopant for MoS2, significantly improving the electrical properties. Our experimental and theoretical results show that, with the deposition of APTES on the substrate, there is an increase in mobility from 103 to 135 cm2/Vs, along with the reduction in the threshold voltage from 5.04 to 1.05 V, which is attributed to APTES passivation, which prevents electron trapping and de-trapping, a significant factor determining variation in threshold voltage (ΔVTH). Density functional theory (DFT) calculations support the experimental results and demonstrate that the introduction of APTES doping in MoS2 induces n-type doping in the material, hence improving the performance of the device. The combination of graphene electrodes along with the APTES passivation on substrate holds the promise for reliable and efficient synaptic applications in neuromorphic computing technologies, as well as next-generation complementary logic devices. © 2024 Elsevier B.V.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20501 - Materials engineering

Projekt

—

Návaznosti

N - Vyzkumna aktivita podporovana z neverejnych zdroju

Rok uplatnění

2025

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Materials Science and Engineering B-Advanced Functional Solid-State Materials

ISSN

0921-5107

e-ISSN

1873-4944

Svazek periodika

311

Číslo periodika v rámci svazku

117797

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

8

Strana od-do

1-8

Kód UT WoS článku

001355908600001

EID výsledku v databázi Scopus

2-s2.0-85208456672