Large Magnetoresistance in an Electrically Tunable van der Waals Antiferromagnet

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F25%3A43933831" target="_blank" >RIV/60461373:22310/25:43933831 - isvavai.cz</a>

Výsledek na webu

<a href="https://journals.aps.org/prl/abstract/10.1103/hpmq-rnh4" target="_blank" >https://journals.aps.org/prl/abstract/10.1103/hpmq-rnh4</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1103/hpmq-rnh4" target="_blank" >10.1103/hpmq-rnh4</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Large Magnetoresistance in an Electrically Tunable van der Waals Antiferromagnet

Popis výsledku v původním jazyce

The interplay between magnetic order and electronic band structure in antiferromagnets has garnered increasing interest due to its potential for spintronic applications. While magnetic transitions have been shown to induce substantial band structure modifications in optical measurements, their influence on electronic transport remains poorly understood. In this work, we investigate the transport properties of CrSBr, a van der Waals antiferromagnetic semiconductor, over a wide range of carrier densities modulated by gate voltage. We observe a drastic contrast in magnetoresistance behavior between the low- and highcarrier density regimes. Through a combination of experiment and modeling, we identify magnetically driven carrier concentration modulation and mobility modulation as the dominant mechanisms governing magnetoresistance in the respective regimes. These findings advance the understanding of magnetoelectric transport in antiferromagnets and suggest promising routes for energy-efficient spintronic technologies in memory, logic, and sensing applications.

Název v anglickém jazyce

Large Magnetoresistance in an Electrically Tunable van der Waals Antiferromagnet

Popis výsledku anglicky

The interplay between magnetic order and electronic band structure in antiferromagnets has garnered increasing interest due to its potential for spintronic applications. While magnetic transitions have been shown to induce substantial band structure modifications in optical measurements, their influence on electronic transport remains poorly understood. In this work, we investigate the transport properties of CrSBr, a van der Waals antiferromagnetic semiconductor, over a wide range of carrier densities modulated by gate voltage. We observe a drastic contrast in magnetoresistance behavior between the low- and highcarrier density regimes. Through a combination of experiment and modeling, we identify magnetically driven carrier concentration modulation and mobility modulation as the dominant mechanisms governing magnetoresistance in the respective regimes. These findings advance the understanding of magnetoelectric transport in antiferromagnets and suggest promising routes for energy-efficient spintronic technologies in memory, logic, and sensing applications.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10300 - Physical sciences

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2025

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

PHYSICAL REVIEW LETTERS

ISSN

0031-9007

e-ISSN

1079-7114

Svazek periodika

135

Číslo periodika v rámci svazku

13

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

8

Strana od-do

136702

Kód UT WoS článku

001578794600004

EID výsledku v databázi Scopus

2-s2.0-105018528075