The properties of samarium-doped zinc oxide/phthalocyanine structure for optoelectronics prepared by pulsed laser deposition and organic molecular evaporation

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22340%2F16%3A43902271" target="_blank" >RIV/60461373:22340/16:43902271 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68378271:_____/16:00461487 RIV/67985882:_____/16:00461487 RIV/00216208:11320/16:10335679

Výsledek na webu

<a href="http://link.springer.com/article/10.1007/s00339-016-9759-6" target="_blank" >http://link.springer.com/article/10.1007/s00339-016-9759-6</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1007/s00339-016-9759-6" target="_blank" >10.1007/s00339-016-9759-6</a>

Jazyk výsledku

angličtina

Název v původním jazyce

The properties of samarium-doped zinc oxide/phthalocyanine structure for optoelectronics prepared by pulsed laser deposition and organic molecular evaporation

Popis výsledku v původním jazyce

Samarium-doped zinc oxide (ZnO:Sm)/zinc phthalocyanine (ZnPc) thin film multilayer structure was prepared by combination of pulsed laser deposition (PLD) and organic molecular evaporation (OME). ZnO: Sm thin film was grown by PLD (Nd: YAG, lambda = 266 nm, tau = 6 ns) from Sm2O3:ZnO (1 % Sm) target in oxygen ambient at pressure of 10 and 20 Pa at room temperature on fused silica and Si(100) substrates. ZnPc thin film was deposited on ZnO: Sm layer by OME. ZnO: Sm films of c-axis-oriented hexagonal wurtzite structure and alpha-form ZnPc were obtained. Emission of intra-4f transition in Sm3+ ions and photoluminescence enhancement of near-band-edge emission of ZnO in ZnO: Sm/ZnPc were observed. Electrical properties were not affected by Sm3+ dopant as ZnO: Sm film exhibited high electrical resistivity similar to 5 x 10(4) Omega cm.

Název v anglickém jazyce

The properties of samarium-doped zinc oxide/phthalocyanine structure for optoelectronics prepared by pulsed laser deposition and organic molecular evaporation

Popis výsledku anglicky

Samarium-doped zinc oxide (ZnO:Sm)/zinc phthalocyanine (ZnPc) thin film multilayer structure was prepared by combination of pulsed laser deposition (PLD) and organic molecular evaporation (OME). ZnO: Sm thin film was grown by PLD (Nd: YAG, lambda = 266 nm, tau = 6 ns) from Sm2O3:ZnO (1 % Sm) target in oxygen ambient at pressure of 10 and 20 Pa at room temperature on fused silica and Si(100) substrates. ZnPc thin film was deposited on ZnO: Sm layer by OME. ZnO: Sm films of c-axis-oriented hexagonal wurtzite structure and alpha-form ZnPc were obtained. Emission of intra-4f transition in Sm3+ ions and photoluminescence enhancement of near-band-edge emission of ZnO in ZnO: Sm/ZnPc were observed. Electrical properties were not affected by Sm3+ dopant as ZnO: Sm film exhibited high electrical resistivity similar to 5 x 10(4) Omega cm.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

—

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2016

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Applied Physics A-Materials Science &amp; Processing

ISSN

0947-8396

e-ISSN

—

Svazek periodika

122

Číslo periodika v rámci svazku

3

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

8

Strana od-do

—

Kód UT WoS článku

000371041700084

EID výsledku v databázi Scopus

2-s2.0-84959308205