Pulsed laser deposition of Ga doped ZnO films - Influence of deposition temperature and laser pulse frequency on structural, optical and electrical properties

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23640%2F19%3A43954229" target="_blank" >RIV/49777513:23640/19:43954229 - isvavai.cz</a>

Výsledek na webu

<a href="http://hdl.handle.net/11025/31208" target="_blank" >http://hdl.handle.net/11025/31208</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.vacuum.2018.10.031" target="_blank" >10.1016/j.vacuum.2018.10.031</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Pulsed laser deposition of Ga doped ZnO films - Influence of deposition temperature and laser pulse frequency on structural, optical and electrical properties

Popis výsledku v původním jazyce

The contribution deals with Ga doped ZnO films (deposited from a sintered target composed of 99.0 ZnO and 1.0wt % of Ga2O3) prepared by pulsed laser deposition (PLD). Experimentally were compared the deposition parameters influence on structural, optical and electrical properties. The variable parameters were: deposition temperature (RT to 500°C) and growth rate (controlled by laser pulsing repetition frequency in range 2–50Hz). Investigation by SEM and XRD confirmed columnar structure of prepared films with highly uniform crystallographic orientation regardless of applied deposition parameters. Samples exhibited high optical transparency in VIS region with sharp absorption edge near380nmand bandgap energies varied between3.19and 3.24eVat room temperature. The best electrical properties (resistivity ∼5.96×10−4Ωcm) was achieved at 400°C and 10Hz of laser frequency, however the application of deposition at RT or highest laser frequency (50Hz) still maintain average resistivity at levels of 10−3Ωcm. The results suggest that PLD can play an important role in production of high conductive transparent thin film deposited on temperature sensitive organic materials at RT deposition levels.

Název v anglickém jazyce

Pulsed laser deposition of Ga doped ZnO films - Influence of deposition temperature and laser pulse frequency on structural, optical and electrical properties

Popis výsledku anglicky

The contribution deals with Ga doped ZnO films (deposited from a sintered target composed of 99.0 ZnO and 1.0wt % of Ga2O3) prepared by pulsed laser deposition (PLD). Experimentally were compared the deposition parameters influence on structural, optical and electrical properties. The variable parameters were: deposition temperature (RT to 500°C) and growth rate (controlled by laser pulsing repetition frequency in range 2–50Hz). Investigation by SEM and XRD confirmed columnar structure of prepared films with highly uniform crystallographic orientation regardless of applied deposition parameters. Samples exhibited high optical transparency in VIS region with sharp absorption edge near380nmand bandgap energies varied between3.19and 3.24eVat room temperature. The best electrical properties (resistivity ∼5.96×10−4Ωcm) was achieved at 400°C and 10Hz of laser frequency, however the application of deposition at RT or highest laser frequency (50Hz) still maintain average resistivity at levels of 10−3Ωcm. The results suggest that PLD can play an important role in production of high conductive transparent thin film deposited on temperature sensitive organic materials at RT deposition levels.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10301 - Atomic, molecular and chemical physics (physics of atoms and molecules including collision, interaction with radiation, magnetic resonances, Mössbauer effect)

Projekt

<a href="/cs/project/EF15_003%2F0000358" target="_blank" >EF15_003/0000358: Výpočetní a experimentální design pokročilých materiálů s novými funkcionalitami</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2019

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Vacuum

ISSN

0042-207X

e-ISSN

—

Svazek periodika

159

Číslo periodika v rámci svazku

JAN 2019

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

7

Strana od-do

134-140

Kód UT WoS článku

000454964400016

EID výsledku v databázi Scopus

2-s2.0-85055038772