Pulsed laser deposited transparent and conductive V-doped ZnO thin films

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F20%3A00543680" target="_blank" >RIV/68378271:_____/20:00543680 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1016/j.tsf.2020.137892" target="_blank" >https://doi.org/10.1016/j.tsf.2020.137892</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.tsf.2020.137892" target="_blank" >10.1016/j.tsf.2020.137892</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Pulsed laser deposited transparent and conductive V-doped ZnO thin films

Popis výsledku v původním jazyce

ZnO and vanadium-doped ZnO (0.7-4.1 at.%) thin films were deposited onto corning glass substrates by the pulsed laser deposition technique using a KrF excimer laser (lambda = 248 nm). The films were deposited at 500 degrees C under an oxygen pressure of 1 Pa with a laser fluence of 2 J/cm(2). The structural, morphological, optical and electrical properties as a function of the dopant atomic concentration were investigated by means of X-ray diffraction, Scanning Electron Microscopy, spectrophotometry, conductivity and Hall measurements. All the doped and undoped films show a preferential orientation along the c-axis with a deterioration at higher doping levels (>4 at. %). Besides, as the doping amount increases the in-plane stress leads to an increase of the c-axis lattice parameter. The films are transparent within the wavelength range 400-1200 nm.

Název v anglickém jazyce

Pulsed laser deposited transparent and conductive V-doped ZnO thin films

Popis výsledku anglicky

ZnO and vanadium-doped ZnO (0.7-4.1 at.%) thin films were deposited onto corning glass substrates by the pulsed laser deposition technique using a KrF excimer laser (lambda = 248 nm). The films were deposited at 500 degrees C under an oxygen pressure of 1 Pa with a laser fluence of 2 J/cm(2). The structural, morphological, optical and electrical properties as a function of the dopant atomic concentration were investigated by means of X-ray diffraction, Scanning Electron Microscopy, spectrophotometry, conductivity and Hall measurements. All the doped and undoped films show a preferential orientation along the c-axis with a deterioration at higher doping levels (>4 at. %). Besides, as the doping amount increases the in-plane stress leads to an increase of the c-axis lattice parameter. The films are transparent within the wavelength range 400-1200 nm.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10301 - Atomic, molecular and chemical physics (physics of atoms and molecules including collision, interaction with radiation, magnetic resonances, Mössbauer effect)

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2020

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Thin Solid Films

ISSN

0040-6090

e-ISSN

1879-2731

Svazek periodika

700

Číslo periodika v rámci svazku

Apr

Stát vydavatele periodika

CH - Švýcarská konfederace

Počet stran výsledku

8

Strana od-do

137892

Kód UT WoS článku

000520173700004

EID výsledku v databázi Scopus

2-s2.0-85081133986