Doubly versus Singly Positively Charged Oxygen Ions Back-Scattering from a Silicon Surface under Dynamic O2+ Bombardment.

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61388955%3A_____%2F03%3A54030006" target="_blank" >RIV/61388955:_____/03:54030006 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Doubly versus Singly Positively Charged Oxygen Ions Back-Scattering from a Silicon Surface under Dynamic O2+ Bombardment.

Popis výsledku v původním jazyce

Abstract: Mass-resolved (and emission-charge-state-resolved) low-energy ion back-scattering during dynamic O-2(+) bombardment of a silicon surface was applied in a Cameca IMS-3f secondary ion mass spectrometry (SIMS) instrument to determine the bombarding energy dependence of the ratio of back-scattered O-2(+), versus O+. While the ratio of O-2(+) versus O+ drops significantly at reduced bombarding energies, O-2(+) back-scattered from silicon was still detectable at an impact energy (in the lab frame) as low as about 1.6 keV per oxygen atom. Assuming neutralization prior to impact, O-2(+) ion formation in an asymmetric O-16 --> Si-28 collision is expected to take place via ''collisional double ionization'' (i.e. by promotion of two outer O 2p electrons) rather than by the production of an inner-shell (O 2s or O 1s) core hole followed by Auger-type de-excitation during or after ejection.

Název v anglickém jazyce

Doubly versus Singly Positively Charged Oxygen Ions Back-Scattering from a Silicon Surface under Dynamic O2+ Bombardment.

Popis výsledku anglicky

Abstract: Mass-resolved (and emission-charge-state-resolved) low-energy ion back-scattering during dynamic O-2(+) bombardment of a silicon surface was applied in a Cameca IMS-3f secondary ion mass spectrometry (SIMS) instrument to determine the bombarding energy dependence of the ratio of back-scattered O-2(+), versus O+. While the ratio of O-2(+) versus O+ drops significantly at reduced bombarding energies, O-2(+) back-scattered from silicon was still detectable at an impact energy (in the lab frame) as low as about 1.6 keV per oxygen atom. Assuming neutralization prior to impact, O-2(+) ion formation in an asymmetric O-16 --> Si-28 collision is expected to take place via ''collisional double ionization'' (i.e. by promotion of two outer O 2p electrons) rather than by the production of an inner-shell (O 2s or O 1s) core hole followed by Auger-type de-excitation during or after ejection.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

CF - Fyzikální chemie a teoretická chemie

OECD FORD obor

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Projekt

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Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2003

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Applied Surface Science

ISSN

0169-4332

e-ISSN

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Svazek periodika

203-204

Číslo periodika v rámci svazku

1/4

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

4

Strana od-do

39-42

Kód UT WoS článku

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EID výsledku v databázi Scopus

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