Dense TiO2 films grown by sol?gel dip coating on glass, F-doped SnO2, and silicon substrates

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61388955%3A_____%2F13%3A00384575" target="_blank" >RIV/61388955:_____/13:00384575 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1557/jmr.2012.240" target="_blank" >http://dx.doi.org/10.1557/jmr.2012.240</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1557/jmr.2012.240" target="_blank" >10.1557/jmr.2012.240</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Dense TiO2 films grown by sol?gel dip coating on glass, F-doped SnO2, and silicon substrates

Popis výsledku v původním jazyce

Exceptionally dense titanium dioxide (TiO2) films were prepared via dip coating from a sol containing poly(hexafluorobutyl methacrylate) as the structure-directing agent. The films were grown on glass, F-doped SnO2, and crystalline silicon (111) faces, either pure or with a thin layer of SiO2. The TiO2 films cover perfectly even rough surfaces, which was ascribed to thixotropic properties of the precursor gel. The films provide antireflection function to crystalline Si wafers for photovoltaic applications. The optical reflectance in visible to near-infrared (NIR) wave lengths region is considerably smaller for Si wafers covered by TiO2/SiO2 film compared with that of SiO2/Si. The dense TiO2 films are amorphous with small amount of anatase and monoclinic TiO2(B). These two phases withstand calcination at 900 °C in films deposited on Si. For comparison, porous TiO2 films were grown by the same dip-coating protocol, but with alternative organic additives, either polymers or ionic liquids.

Název v anglickém jazyce

Dense TiO2 films grown by sol?gel dip coating on glass, F-doped SnO2, and silicon substrates

Popis výsledku anglicky

Exceptionally dense titanium dioxide (TiO2) films were prepared via dip coating from a sol containing poly(hexafluorobutyl methacrylate) as the structure-directing agent. The films were grown on glass, F-doped SnO2, and crystalline silicon (111) faces, either pure or with a thin layer of SiO2. The TiO2 films cover perfectly even rough surfaces, which was ascribed to thixotropic properties of the precursor gel. The films provide antireflection function to crystalline Si wafers for photovoltaic applications. The optical reflectance in visible to near-infrared (NIR) wave lengths region is considerably smaller for Si wafers covered by TiO2/SiO2 film compared with that of SiO2/Si. The dense TiO2 films are amorphous with small amount of anatase and monoclinic TiO2(B). These two phases withstand calcination at 900 °C in films deposited on Si. For comparison, porous TiO2 films were grown by the same dip-coating protocol, but with alternative organic additives, either polymers or ionic liquids.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

CG - Elektrochemie

OECD FORD obor

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Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2013

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Materials Research

ISSN

0884-2914

e-ISSN

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Svazek periodika

28

Číslo periodika v rámci svazku

3

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

9

Strana od-do

385-393

Kód UT WoS článku

000314421700015

EID výsledku v databázi Scopus

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