Temperature-induced strain and doping in monolayer and bilayer isotopically labeled graphene

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61388955%3A_____%2F15%3A00449321" target="_blank" >RIV/61388955:_____/15:00449321 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68378271:_____/15:00449321

Výsledek na webu

<a href="http://dx.doi.org/10.1103/PhysRevB.92.125437" target="_blank" >http://dx.doi.org/10.1103/PhysRevB.92.125437</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1103/PhysRevB.92.125437" target="_blank" >10.1103/PhysRevB.92.125437</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Temperature-induced strain and doping in monolayer and bilayer isotopically labeled graphene

Popis výsledku v původním jazyce

The electronic band structure of graphene is strongly dependent on the amount of strain and/or doping present. We performed a comprehensive study of temperature-dependent strain and doping in isotopically labelled graphene mono- and bilayers on a SiO2/Si substrate by Raman spectral mapping at well-defined temperatures between 300 and 10 K. The principal Raman active modes of the graphene (G, 2D) were subjected to correlation analysis, which enabled reliable separation of the strain and doping contributions. The influence of strain on the monolayer and top and bottom layers of the bilayer graphene is large and shows a pronounced temperature-dependent variation. Temperature dependence of the doping is clearly present in both layers, suggesting equalization of the captured charge in the bilayer down to low temperatures.

Název v anglickém jazyce

Temperature-induced strain and doping in monolayer and bilayer isotopically labeled graphene

Popis výsledku anglicky

The electronic band structure of graphene is strongly dependent on the amount of strain and/or doping present. We performed a comprehensive study of temperature-dependent strain and doping in isotopically labelled graphene mono- and bilayers on a SiO2/Si substrate by Raman spectral mapping at well-defined temperatures between 300 and 10 K. The principal Raman active modes of the graphene (G, 2D) were subjected to correlation analysis, which enabled reliable separation of the strain and doping contributions. The influence of strain on the monolayer and top and bottom layers of the bilayer graphene is large and shows a pronounced temperature-dependent variation. Temperature dependence of the doping is clearly present in both layers, suggesting equalization of the captured charge in the bilayer down to low temperatures.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

—

Projekt

<a href="/cs/project/LL1301" target="_blank" >LL1301: Od grafenových hybridních nanostruktur k ekologické elektronice</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2015

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Physical Review. B

ISSN

1098-0121

e-ISSN

—

Svazek periodika

92

Číslo periodika v rámci svazku

12

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

9

Strana od-do

"125437-1"-"125437-9"

Kód UT WoS článku

000361801900007

EID výsledku v databázi Scopus

2-s2.0-84944096785