Monitoring the doping of graphene on SiO2/Si substrates during the thermal annealing process

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61388955%3A_____%2F16%3A00462412" target="_blank" >RIV/61388955:_____/16:00462412 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1039/C6RA10764H" target="_blank" >http://dx.doi.org/10.1039/C6RA10764H</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1039/C6RA10764H" target="_blank" >10.1039/C6RA10764H</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Monitoring the doping of graphene on SiO2/Si substrates during the thermal annealing process

Popis výsledku v původním jazyce

Various doping levels of graphene on SiO2/Si substrates are reported in the literature. We show by in situ Raman spectroscopy that the heating of chemical vapor deposited graphene on SiO2/Si during the transfer process is the main factor causing this unintended doping of graphene samples. Large areas of graphene were analyzed using Raman spectroscopy, before and after the thermal treatment, to demonstrate that the effects of heating are spread throughout the graphene layer. The perturbations caused by the exposure of supported graphene during the first heating cycle (in vacuum) are irreversible, even though the samples were later in contact with the atmosphere. These results clarify deviations found in the Raman data obtained for transferred chemical vapor deposited graphene by different authors.

Název v anglickém jazyce

Monitoring the doping of graphene on SiO2/Si substrates during the thermal annealing process

Popis výsledku anglicky

Various doping levels of graphene on SiO2/Si substrates are reported in the literature. We show by in situ Raman spectroscopy that the heating of chemical vapor deposited graphene on SiO2/Si during the transfer process is the main factor causing this unintended doping of graphene samples. Large areas of graphene were analyzed using Raman spectroscopy, before and after the thermal treatment, to demonstrate that the effects of heating are spread throughout the graphene layer. The perturbations caused by the exposure of supported graphene during the first heating cycle (in vacuum) are irreversible, even though the samples were later in contact with the atmosphere. These results clarify deviations found in the Raman data obtained for transferred chemical vapor deposited graphene by different authors.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

CF - Fyzikální chemie a teoretická chemie

OECD FORD obor

—

Projekt

<a href="/cs/project/LL1301" target="_blank" >LL1301: Od grafenových hybridních nanostruktur k ekologické elektronice</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2016

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

RSC Advances

ISSN

2046-2069

e-ISSN

—

Svazek periodika

6

Číslo periodika v rámci svazku

JUL 2016

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

8

Strana od-do

72859-72864

Kód UT WoS článku

000381513300125

EID výsledku v databázi Scopus

2-s2.0-84982684416