Effect of layer number and layer stacking registry on the formation and quantification of defects in graphene

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61388955%3A_____%2F16%3A00467076" target="_blank" >RIV/61388955:_____/16:00467076 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.carbon.2015.11.045" target="_blank" >http://dx.doi.org/10.1016/j.carbon.2015.11.045</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.carbon.2015.11.045" target="_blank" >10.1016/j.carbon.2015.11.045</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Effect of layer number and layer stacking registry on the formation and quantification of defects in graphene

Popis výsledku v původním jazyce

Correct defect quantification in graphene samples is crucial both for fundamental and applied research. Raman spectroscopy represents the most widely used tool to identify defects in graphene. However, despite its extreme importance the relation between the Raman features and the amount of defects in multilayered graphene samples has not been experimentally verified. In this study we intentionally created defects in single layer graphene, turbostratic bilayer graphene and Bernal stacked bilayer graphene by oxygen plasma. By employing isotopic labelling, our study reveals substantial differences of the effects of plasma treatment on individual layers in bilayer graphene with different stacking orders. In addition Raman spectroscopy evidences scattering of phonons in the bottom layer by defects in the top layer for Bernal-stacked samples, which can in general lead to overestimation of the number of defects by as much as a factor of two. (C) 2015 Elsevier Ltd. All rights reserved.

Název v anglickém jazyce

Effect of layer number and layer stacking registry on the formation and quantification of defects in graphene

Popis výsledku anglicky

Correct defect quantification in graphene samples is crucial both for fundamental and applied research. Raman spectroscopy represents the most widely used tool to identify defects in graphene. However, despite its extreme importance the relation between the Raman features and the amount of defects in multilayered graphene samples has not been experimentally verified. In this study we intentionally created defects in single layer graphene, turbostratic bilayer graphene and Bernal stacked bilayer graphene by oxygen plasma. By employing isotopic labelling, our study reveals substantial differences of the effects of plasma treatment on individual layers in bilayer graphene with different stacking orders. In addition Raman spectroscopy evidences scattering of phonons in the bottom layer by defects in the top layer for Bernal-stacked samples, which can in general lead to overestimation of the number of defects by as much as a factor of two. (C) 2015 Elsevier Ltd. All rights reserved.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

CF - Fyzikální chemie a teoretická chemie

OECD FORD obor

—

Projekt

<a href="/cs/project/LH13022" target="_blank" >LH13022: Isotopově značené grafenové vrstvy</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2016

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Carbon

ISSN

0008-6223

e-ISSN

—

Svazek periodika

98

Číslo periodika v rámci svazku

MAR 2016

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

7

Strana od-do

592-598

Kód UT WoS článku

000367233000073

EID výsledku v databázi Scopus

2-s2.0-84955280043