Fine tuning of optical transition energy of twisted bilayer graphene via interlayer distance modulation

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61388955%3A_____%2F17%3A00471907" target="_blank" >RIV/61388955:_____/17:00471907 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68378271:_____/17:00471907 RIV/61388998:_____/17:00471907 RIV/00216208:11310/17:10361084

Výsledek na webu

<a href="http://dx.doi.org/10.1103/PhysRevB.95.085138" target="_blank" >http://dx.doi.org/10.1103/PhysRevB.95.085138</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1103/PhysRevB.95.085138" target="_blank" >10.1103/PhysRevB.95.085138</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Fine tuning of optical transition energy of twisted bilayer graphene via interlayer distance modulation

Popis výsledku v původním jazyce

Since the advent of graphene, tuning of its electronicnstructure has been one of the strongest focal points for manynresearchers. However, so far the vision of exploiting thenunique properties of graphene for the replacement of siliconnin electronics has been hampered by the inability to open ansizable band gap in a simple, controlled, and cost-effectivenmanner [1]. For this purpose, bilayer graphene (BLG) holdsnmore promise, for applications such as nanoelectronics, thannmonolayer graphene, as it offers several routes of profitingnfrom the interactions between the two layers [2–4], e.g., byndual gating [4,5], molecular doping [6], or theoretically bynmechanical deformation [7]. Similarly, the appealing conceptnof a bilayer pseudospin field effect transistor (BiSFET) stillnexists only at the theoretical level [3,8,9]. The interlayerndistance could be one of the important parameters controllingnthe excitonic gap in BiSFET [10].

Název v anglickém jazyce

Fine tuning of optical transition energy of twisted bilayer graphene via interlayer distance modulation

Popis výsledku anglicky

Since the advent of graphene, tuning of its electronicnstructure has been one of the strongest focal points for manynresearchers. However, so far the vision of exploiting thenunique properties of graphene for the replacement of siliconnin electronics has been hampered by the inability to open ansizable band gap in a simple, controlled, and cost-effectivenmanner [1]. For this purpose, bilayer graphene (BLG) holdsnmore promise, for applications such as nanoelectronics, thannmonolayer graphene, as it offers several routes of profitingnfrom the interactions between the two layers [2–4], e.g., byndual gating [4,5], molecular doping [6], or theoretically bynmechanical deformation [7]. Similarly, the appealing conceptnof a bilayer pseudospin field effect transistor (BiSFET) stillnexists only at the theoretical level [3,8,9]. The interlayerndistance could be one of the important parameters controllingnthe excitonic gap in BiSFET [10].

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2017

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Physical Review B

ISSN

2469-9950

e-ISSN

—

Svazek periodika

95

Číslo periodika v rámci svazku

8

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

5

Strana od-do

—

Kód UT WoS článku

000394661100004

EID výsledku v databázi Scopus

2-s2.0-85014537505