Photovoltaic characterization of graphene/silicon Schottky junctions from local and macroscopic perspectives

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61388955%3A_____%2F17%3A00474082" target="_blank" >RIV/61388955:_____/17:00474082 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68378271:_____/17:00474082

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.cplett.2017.03.041" target="_blank" >http://dx.doi.org/10.1016/j.cplett.2017.03.041</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.cplett.2017.03.041" target="_blank" >10.1016/j.cplett.2017.03.041</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Photovoltaic characterization of graphene/silicon Schottky junctions from local and macroscopic perspectives

Popis výsledku v původním jazyce

We present Schottky junction solar cell composed of CVD graphene transferred onto hydrogenated amorphous and microcrystalline silicon (µc-Si:H). The obtained results proved that the thickness of silicon oxide barrier at graphene-µc-Si:H interface is one of the key parameters that determines the solar cell performance. We demonstrated sample with open-circuit voltage of 445 mV, a remarkable value for undoped graphene-based solar cell. Photovoltaic characteristics of this sample remained stable over 11 months and could be further improved by doping. The graphene/silicon junctions were studied both macroscopically with solar simulator and locally by C-AFM. Very good correlation between both independent measurements proved C-AFM as highly useful tool for photovoltaic characterization on nano- and micrometer scale.

Název v anglickém jazyce

Photovoltaic characterization of graphene/silicon Schottky junctions from local and macroscopic perspectives

Popis výsledku anglicky

We present Schottky junction solar cell composed of CVD graphene transferred onto hydrogenated amorphous and microcrystalline silicon (µc-Si:H). The obtained results proved that the thickness of silicon oxide barrier at graphene-µc-Si:H interface is one of the key parameters that determines the solar cell performance. We demonstrated sample with open-circuit voltage of 445 mV, a remarkable value for undoped graphene-based solar cell. Photovoltaic characteristics of this sample remained stable over 11 months and could be further improved by doping. The graphene/silicon junctions were studied both macroscopically with solar simulator and locally by C-AFM. Very good correlation between both independent measurements proved C-AFM as highly useful tool for photovoltaic characterization on nano- and micrometer scale.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10405 - Electrochemistry (dry cells, batteries, fuel cells, corrosion metals, electrolysis)

Projekt

<a href="/cs/project/GA14-15357S" target="_blank" >GA14-15357S: Modifikace elektronové struktury grafenu mechanickou deformací</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2017

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Chemical Physics Letters

ISSN

0009-2614

e-ISSN

—

Svazek periodika

676

Číslo periodika v rámci svazku

May

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

7

Strana od-do

82-88

Kód UT WoS článku

000400531700014

EID výsledku v databázi Scopus

2-s2.0-85016143045