Fabrication of double- and triple-junction solar cells with hydrogenated amorphous silicon oxide (a-SiOx:H) top cell

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F15%3A00456491" target="_blank" >RIV/68378271:_____/15:00456491 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.solmat.2015.05.033" target="_blank" >http://dx.doi.org/10.1016/j.solmat.2015.05.033</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.solmat.2015.05.033" target="_blank" >10.1016/j.solmat.2015.05.033</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Fabrication of double- and triple-junction solar cells with hydrogenated amorphous silicon oxide (a-SiOx:H) top cell

Popis výsledku v původním jazyce

We investigate the potential of intrinsic a-SiOx:H, with a band gap of 2.07 eV, as absorber material in thin-film silicon solar cells. Single junction a-SiOx:H cells with an i-layer thickness of 100?200 nm can have a high Voc and FF of up to 1.04 V and 0.74, respectively. This makes this device interesting for application as the first sub-cell in multi-junction devices. We fabricate two types of triple-junction (3J) solar cells, which consist of the second sub-cell of either a-Si:H (Eg1.7 eV) or nc-Si:H(Eg1.1 eV), with the nc-Si:H third sub-cell. In both 3J solar cells current mismatching can be reduced with a thin a-SiOx:H first sub-cell (100 nm) such that its high VocFF product can be fully used. An initial efficiency as high as 12.58% was obtained(Voc: 2.37 V, Jsc: 7.27 mA/cm2 and FF: 0.73) for the a-SiOx:H/a-Si:H/nc-Si:H 3J solar cell. This efficiency is competitive with the efficiency of other types of 3J solar cells.

Název v anglickém jazyce

Fabrication of double- and triple-junction solar cells with hydrogenated amorphous silicon oxide (a-SiOx:H) top cell

Popis výsledku anglicky

We investigate the potential of intrinsic a-SiOx:H, with a band gap of 2.07 eV, as absorber material in thin-film silicon solar cells. Single junction a-SiOx:H cells with an i-layer thickness of 100?200 nm can have a high Voc and FF of up to 1.04 V and 0.74, respectively. This makes this device interesting for application as the first sub-cell in multi-junction devices. We fabricate two types of triple-junction (3J) solar cells, which consist of the second sub-cell of either a-Si:H (Eg1.7 eV) or nc-Si:H(Eg1.1 eV), with the nc-Si:H third sub-cell. In both 3J solar cells current mismatching can be reduced with a thin a-SiOx:H first sub-cell (100 nm) such that its high VocFF product can be fully used. An initial efficiency as high as 12.58% was obtained(Voc: 2.37 V, Jsc: 7.27 mA/cm2 and FF: 0.73) for the a-SiOx:H/a-Si:H/nc-Si:H 3J solar cell. This efficiency is competitive with the efficiency of other types of 3J solar cells.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

—

Projekt

<a href="/cs/project/7E12029" target="_blank" >7E12029: Accelerated development and prototyping of nano-technology-based high-efficiency thin-film silicon solar modules ("Fast Track")</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2015

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Solar Energy Materials and Solar Cells

ISSN

0927-0248

e-ISSN

—

Svazek periodika

141

Číslo periodika v rámci svazku

Oct

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

6

Strana od-do

148-153

Kód UT WoS článku

000359504200018

EID výsledku v databázi Scopus

2-s2.0-84931269971