High-quality PVD graphene growth by fullerene decomposition on Cu foils

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61388955%3A_____%2F17%3A00483656" target="_blank" >RIV/61388955:_____/17:00483656 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.carbon.2017.04.067" target="_blank" >http://dx.doi.org/10.1016/j.carbon.2017.04.067</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.carbon.2017.04.067" target="_blank" >10.1016/j.carbon.2017.04.067</a>

Jazyk výsledku

angličtina

Název v původním jazyce

High-quality PVD graphene growth by fullerene decomposition on Cu foils

Popis výsledku v původním jazyce

We present a new protocol to grow large-area, high-quality single-layer graphene on Cu foils at relatively low temperatures. We use C-60 molecules evaporated in ultra high vacuum conditions as carbon source. This clean environment results in a strong reduction of oxygen-containing groups as depicted by X-ray photoelectron spectroscopy (XPS). Unzipping of C-60 is thermally promoted by annealing the substrate at 800 degrees C during evaporation. The graphene layer extends over areas larger than the Cu crystallite size, although it is changing its orientation with respect to the surface in the wrinkles and grain boundaries, producing a modulated ring in the low energy electron diffraction (LEED) pattern. This protocol is a self-limiting process leading exclusively to one single graphene layer. Raman spectroscopy confirms the high quality of the grown graphene. This layer exhibits an unperturbed Dirac-cone with a clear n-doping of 0.77 eV, which is caused by the interaction between graphene and substrate. Density functional theory (DFT) calculations show that this interaction can be induced by a coupling between graphene and substrate at specific points of the structure leading to a local sp(3) configuration, which also contribute to the D-band in the Raman spectra. (C) 2017 Elsevier Ltd. All rights reserved.

Název v anglickém jazyce

High-quality PVD graphene growth by fullerene decomposition on Cu foils

Popis výsledku anglicky

We present a new protocol to grow large-area, high-quality single-layer graphene on Cu foils at relatively low temperatures. We use C-60 molecules evaporated in ultra high vacuum conditions as carbon source. This clean environment results in a strong reduction of oxygen-containing groups as depicted by X-ray photoelectron spectroscopy (XPS). Unzipping of C-60 is thermally promoted by annealing the substrate at 800 degrees C during evaporation. The graphene layer extends over areas larger than the Cu crystallite size, although it is changing its orientation with respect to the surface in the wrinkles and grain boundaries, producing a modulated ring in the low energy electron diffraction (LEED) pattern. This protocol is a self-limiting process leading exclusively to one single graphene layer. Raman spectroscopy confirms the high quality of the grown graphene. This layer exhibits an unperturbed Dirac-cone with a clear n-doping of 0.77 eV, which is caused by the interaction between graphene and substrate. Density functional theory (DFT) calculations show that this interaction can be induced by a coupling between graphene and substrate at specific points of the structure leading to a local sp(3) configuration, which also contribute to the D-band in the Raman spectra. (C) 2017 Elsevier Ltd. All rights reserved.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10403 - Physical chemistry

Projekt

<a href="/cs/project/LL1301" target="_blank" >LL1301: Od grafenových hybridních nanostruktur k ekologické elektronice</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2017

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Carbon

ISSN

0008-6223

e-ISSN

—

Svazek periodika

119

Číslo periodika v rámci svazku

AUG 2017

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

9

Strana od-do

535-543

Kód UT WoS článku

000402713300065

EID výsledku v databázi Scopus

2-s2.0-85018772377