Rippled Metallic-Nanowire/Graphene/Semiconductor Nanostack for a Gate-Tunable Ultrahigh-Performance Stretchable Phototransistor

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61388955%3A_____%2F20%3A00533057" target="_blank" >RIV/61388955:_____/20:00533057 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/00216208:11320/20:10421683

Výsledek na webu

<a href="http://hdl.handle.net/11104/0311556" target="_blank" >http://hdl.handle.net/11104/0311556</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1002/adom.202000859" target="_blank" >10.1002/adom.202000859</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Rippled Metallic-Nanowire/Graphene/Semiconductor Nanostack for a Gate-Tunable Ultrahigh-Performance Stretchable Phototransistor

Popis výsledku v původním jazyce

Despite being one of the most robust materials with intriguing optoelectronic properties, the practical use of single-layer graphene (SLG) in soft-electronic technologies is limited due to its poor native stretchability, low absorption coefficient, poor on/off ratio, etc. To circumvent these difficulties, here, a rippled gate-tunable ultrahigh responsivity nanostack phototransistor composed of SLG, semiconductor-nanoparticles (NPs), and metallic-nanowires (NWs) embedded in an elastic film is proposed. The unique electronic conductivity of SLG and high absorption strength of semiconductor-NPs produce an ultrahigh photocurrent gain. The metallic NWs serve as an excellent stretchable gate electrode. The ripple structured nanomaterials surmount their native stretchability, providing strength and electromechanical stability to the composite. Combining all these unique features, highly stretchable and ultrasensitive phototransistors are created, which can be stretched up to 30% with high repeatability maintaining a photoresponsivity, photocurrent gain, and detectivity of approximate to 10(6)A W-1, 10(7), and 10(13)Jones, respectively, which are comparable with the same class of rigid devices. In addition, the device can be turned-off by applying a suitable gate voltage, which is very convenient for photonic circuits. Moreover, the study can be extended to many other 2D systems, and therefore paves a crucial step for designing high-performance soft optoelectronic devices for practical applications.

Název v anglickém jazyce

Rippled Metallic-Nanowire/Graphene/Semiconductor Nanostack for a Gate-Tunable Ultrahigh-Performance Stretchable Phototransistor

Popis výsledku anglicky

Despite being one of the most robust materials with intriguing optoelectronic properties, the practical use of single-layer graphene (SLG) in soft-electronic technologies is limited due to its poor native stretchability, low absorption coefficient, poor on/off ratio, etc. To circumvent these difficulties, here, a rippled gate-tunable ultrahigh responsivity nanostack phototransistor composed of SLG, semiconductor-nanoparticles (NPs), and metallic-nanowires (NWs) embedded in an elastic film is proposed. The unique electronic conductivity of SLG and high absorption strength of semiconductor-NPs produce an ultrahigh photocurrent gain. The metallic NWs serve as an excellent stretchable gate electrode. The ripple structured nanomaterials surmount their native stretchability, providing strength and electromechanical stability to the composite. Combining all these unique features, highly stretchable and ultrasensitive phototransistors are created, which can be stretched up to 30% with high repeatability maintaining a photoresponsivity, photocurrent gain, and detectivity of approximate to 10(6)A W-1, 10(7), and 10(13)Jones, respectively, which are comparable with the same class of rigid devices. In addition, the device can be turned-off by applying a suitable gate voltage, which is very convenient for photonic circuits. Moreover, the study can be extended to many other 2D systems, and therefore paves a crucial step for designing high-performance soft optoelectronic devices for practical applications.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10403 - Physical chemistry

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2020

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Advanced Optical Materials

ISSN

2195-1071

e-ISSN

—

Svazek periodika

8

Číslo periodika v rámci svazku

19

Stát vydavatele periodika

DE - Spolková republika Německo

Počet stran výsledku

10

Strana od-do

2000859

Kód UT WoS článku

000550679500001

EID výsledku v databázi Scopus

2-s2.0-85088297638