Localized Spectroelectrochemical Identification of Basal Plane and Defect-Related Charge-Transfer Processes in Graphene

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61388955%3A_____%2F22%3A00551620" target="_blank" >RIV/61388955:_____/22:00551620 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/00216208:11310/22:10454563

Výsledek na webu

<a href="http://hdl.handle.net/11104/0326866" target="_blank" >http://hdl.handle.net/11104/0326866</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1021/acs.jpclett.1c03466" target="_blank" >10.1021/acs.jpclett.1c03466</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Localized Spectroelectrochemical Identification of Basal Plane and Defect-Related Charge-Transfer Processes in Graphene

Popis výsledku v původním jazyce

It is well-known that structural defects play a decisive role in electrochemical behavior of atomically thin materials, where all the defects are directly accessible by the electrolyte. However, the vast majority of experimental techniques do not allow disentanglement of the processes at the edges/defects from those at the intact basal plane. Therefore, to address this issue, we introduce a localized spectroelectrochemical method featuring a microdroplet electrochemical cell with simultaneous Raman spectroscopy monitoring. The electrochemical and spectral responses of the basal planes of monolayer graphene samples with varying levels of disorder were compared. Two contributions, stemming from the intact and defective areas on the surface, respectively, were discovered both in the Raman G band shifts and cyclic voltammetry using the hexaammineruthenium complex. Consequently, two independent electron transfer processes of slower and faster rates coexist in one sample, but they are restricted to the defect-free and defect-rich areas, respectively.

Název v anglickém jazyce

Localized Spectroelectrochemical Identification of Basal Plane and Defect-Related Charge-Transfer Processes in Graphene

Popis výsledku anglicky

It is well-known that structural defects play a decisive role in electrochemical behavior of atomically thin materials, where all the defects are directly accessible by the electrolyte. However, the vast majority of experimental techniques do not allow disentanglement of the processes at the edges/defects from those at the intact basal plane. Therefore, to address this issue, we introduce a localized spectroelectrochemical method featuring a microdroplet electrochemical cell with simultaneous Raman spectroscopy monitoring. The electrochemical and spectral responses of the basal planes of monolayer graphene samples with varying levels of disorder were compared. Two contributions, stemming from the intact and defective areas on the surface, respectively, were discovered both in the Raman G band shifts and cyclic voltammetry using the hexaammineruthenium complex. Consequently, two independent electron transfer processes of slower and faster rates coexist in one sample, but they are restricted to the defect-free and defect-rich areas, respectively.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10405 - Electrochemistry (dry cells, batteries, fuel cells, corrosion metals, electrolysis)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2022

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Physical Chemistry Letters

ISSN

1948-7185

e-ISSN

—

Svazek periodika

13

Číslo periodika v rámci svazku

2

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

7

Strana od-do

642-648

Kód UT WoS článku

000743687700001

EID výsledku v databázi Scopus

2-s2.0-85123566840