Tuning the Photoluminescence and Raman Response of Single-Layer WS2 Crystals Using Biaxial Strain

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61388955%3A_____%2F23%3A00569161" target="_blank" >RIV/61388955:_____/23:00569161 - isvavai.cz</a>

Výsledek na webu

<a href="https://hdl.handle.net/11104/0340496" target="_blank" >https://hdl.handle.net/11104/0340496</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1021/acs.jpcc.2c06933" target="_blank" >10.1021/acs.jpcc.2c06933</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Tuning the Photoluminescence and Raman Response of Single-Layer WS2 Crystals Using Biaxial Strain

Popis výsledku v původním jazyce

Chemical vapor deposited WS2 monolayers are subjected for the first time to controlled pure biaxial tensile strain up to 0.7%. From photoluminescence (PL) spectroscopy, the trion and neutral exciton deformation potentials are found to be similar, approximately −130 meV/%. It is shown that the excess carrier concentration as well as residual strain in WS2 samples can be determined from the PL spectra. The experimental Grüneisen parameter of the in-plane E′ Raman mode for 1L-WS2 is found to be equal to the corresponding mode (E2g) mode in bulk WS2. The impact of mechanical strain on the electronic and phonon band structures is also calculated in the framework of density functional theory. The theoretically obtained deformation potential for the direct transition is in very good agreement with the experiment. The reduced dimensionality of the monolayer enables the visualization over the entire Brillouin zone of both the calculated phonon dispersions and the Grüneisen parameters, which are compared with the experimentally accessible ones. This work contributes to the experimental implementation of mechanical strain engineering applications in semiconducting two-dimensional transition metal dichalcogenides.

Název v anglickém jazyce

Tuning the Photoluminescence and Raman Response of Single-Layer WS2 Crystals Using Biaxial Strain

Popis výsledku anglicky

Chemical vapor deposited WS2 monolayers are subjected for the first time to controlled pure biaxial tensile strain up to 0.7%. From photoluminescence (PL) spectroscopy, the trion and neutral exciton deformation potentials are found to be similar, approximately −130 meV/%. It is shown that the excess carrier concentration as well as residual strain in WS2 samples can be determined from the PL spectra. The experimental Grüneisen parameter of the in-plane E′ Raman mode for 1L-WS2 is found to be equal to the corresponding mode (E2g) mode in bulk WS2. The impact of mechanical strain on the electronic and phonon band structures is also calculated in the framework of density functional theory. The theoretically obtained deformation potential for the direct transition is in very good agreement with the experiment. The reduced dimensionality of the monolayer enables the visualization over the entire Brillouin zone of both the calculated phonon dispersions and the Grüneisen parameters, which are compared with the experimentally accessible ones. This work contributes to the experimental implementation of mechanical strain engineering applications in semiconducting two-dimensional transition metal dichalcogenides.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10403 - Physical chemistry

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2023

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Physical Chemistry C

ISSN

1932-7447

e-ISSN

1932-7455

Svazek periodika

127

Číslo periodika v rámci svazku

7

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

10

Strana od-do

3506-3515

Kód UT WoS článku

000956163900001

EID výsledku v databázi Scopus

2-s2.0-85148296430