Addressing Individual Layers and Their Optical Properties in Artificial MoS₂ Bilayers via Sulfur Isotope Labeling

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61388955%3A_____%2F24%3A00588384" target="_blank" >RIV/61388955:_____/24:00588384 - isvavai.cz</a>

Výsledek na webu

<a href="https://hdl.handle.net/11104/0355285" target="_blank" >https://hdl.handle.net/11104/0355285</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1021/acs.jpcc.4c03132" target="_blank" >10.1021/acs.jpcc.4c03132</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Addressing Individual Layers and Their Optical Properties in Artificial MoS₂ Bilayers via Sulfur Isotope Labeling

Popis výsledku v původním jazyce

The physicochemical properties of van der Waals (vdW) heterostructures are driven by the delicate interactions between the individual layers in a multilayer stack. While addressing the monolayers of different compositions in the multilayer is feasible, exploring the intrinsic properties of the monolayers of the same composition within a multilayer is extremely challenging. This becomes of utmost importance in energy conversion and storage concepts based on layered vdW materials. For example, the charge distribution on the individual layers can be determined, and the behavior can be disentangled. We introduce sulfur isotope labeling as a powerful tool for separately addressing monolayers in vdW heterostructures composed of transition metal disulfides. Using chemical vapor deposition (CVD), we prepared monolayers of MoS2 using natural sulfur (S-Nat) and (34)sulfur (S-34) as precursors. Artificial bilayers were then prepared by transferring (MoS2)-S-34 onto (MoS2)-S-Nat. Thanks to the different masses of S-Nat and S-34, we were able to disentangle the spectral fingerprints of phonons and excitons in the two layers using Raman and photoluminescence microspectroscopy. Also, the charge distribution on the individual layers was revealed through Raman spectra analysis. Our work thus provides a different perspective for understanding the functionalities and optical properties of smart architecture based on transition metal chalcogenides.

Název v anglickém jazyce

Addressing Individual Layers and Their Optical Properties in Artificial MoS₂ Bilayers via Sulfur Isotope Labeling

Popis výsledku anglicky

The physicochemical properties of van der Waals (vdW) heterostructures are driven by the delicate interactions between the individual layers in a multilayer stack. While addressing the monolayers of different compositions in the multilayer is feasible, exploring the intrinsic properties of the monolayers of the same composition within a multilayer is extremely challenging. This becomes of utmost importance in energy conversion and storage concepts based on layered vdW materials. For example, the charge distribution on the individual layers can be determined, and the behavior can be disentangled. We introduce sulfur isotope labeling as a powerful tool for separately addressing monolayers in vdW heterostructures composed of transition metal disulfides. Using chemical vapor deposition (CVD), we prepared monolayers of MoS2 using natural sulfur (S-Nat) and (34)sulfur (S-34) as precursors. Artificial bilayers were then prepared by transferring (MoS2)-S-34 onto (MoS2)-S-Nat. Thanks to the different masses of S-Nat and S-34, we were able to disentangle the spectral fingerprints of phonons and excitons in the two layers using Raman and photoluminescence microspectroscopy. Also, the charge distribution on the individual layers was revealed through Raman spectra analysis. Our work thus provides a different perspective for understanding the functionalities and optical properties of smart architecture based on transition metal chalcogenides.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10403 - Physical chemistry

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2024

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Physical Chemistry C

ISSN

1932-7447

e-ISSN

1932-7455

Svazek periodika

128

Číslo periodika v rámci svazku

30

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

7

Strana od-do

12575-12581

Kód UT WoS článku

001275507600001

EID výsledku v databázi Scopus

2-s2.0-85200393120