Material Transfer and Contact Optimization in MoS2 Nanotube Devices

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61388955%3A_____%2F25%3A00600186" target="_blank" >RIV/61388955:_____/25:00600186 - isvavai.cz</a>

Výsledek na webu

<a href="https://onlinelibrary.wiley.com/doi/10.1002/pssb.202400366" target="_blank" >https://onlinelibrary.wiley.com/doi/10.1002/pssb.202400366</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1002/pssb.202400366" target="_blank" >10.1002/pssb.202400366</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Material Transfer and Contact Optimization in MoS2 Nanotube Devices

Popis výsledku v původním jazyce

While the promise of clean and defect-free (Formula presented.) nanotubes as quantum electronic devices is obvious, ranging from strong spin–orbit interaction to intrinsic superconductivity, device fabrication still poses considerable challenges. Deterministic transfer of transition metal dichalcogenide nanomaterials and transparent contacts to the nanomaterials are nowadays highly active topics of research, both with fundamental research and applications in mind. Contamination from transport agents as well as surface adsorbates and surface charges play a critical role for device performance. Many techniques have been proposed to address these topics for transition metal dichalcogenides in general. Herein, their usage for the transfer-based fabrication of (Formula presented.) nanotube devices is analyzed. Further, different contact materials are compared in order to avoid the formation of a Schottky barrier.

Název v anglickém jazyce

Material Transfer and Contact Optimization in MoS2 Nanotube Devices

Popis výsledku anglicky

While the promise of clean and defect-free (Formula presented.) nanotubes as quantum electronic devices is obvious, ranging from strong spin–orbit interaction to intrinsic superconductivity, device fabrication still poses considerable challenges. Deterministic transfer of transition metal dichalcogenide nanomaterials and transparent contacts to the nanomaterials are nowadays highly active topics of research, both with fundamental research and applications in mind. Contamination from transport agents as well as surface adsorbates and surface charges play a critical role for device performance. Many techniques have been proposed to address these topics for transition metal dichalcogenides in general. Herein, their usage for the transfer-based fabrication of (Formula presented.) nanotube devices is analyzed. Further, different contact materials are compared in order to avoid the formation of a Schottky barrier.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10403 - Physical chemistry

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2025

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Physica Status Solidi B

ISSN

0370-1972

e-ISSN

1521-3951

Svazek periodika

262

Číslo periodika v rámci svazku

3

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

9

Strana od-do

2400366

Kód UT WoS článku

001342187200001

EID výsledku v databázi Scopus

2-s2.0-85207247690