Tuning of MoS2 Photoluminescence in Heterostructures with CrSBr

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61388955%3A_____%2F25%3A00619388" target="_blank" >RIV/61388955:_____/25:00619388 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/00216208:11320/25:10497960 RIV/60461373:22310/25:43932135 RIV/60461373:22340/25:43932135

Výsledek na webu

<a href="https://hdl.handle.net/11104/0366123" target="_blank" >https://hdl.handle.net/11104/0366123</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1021/acsami.5c01924" target="_blank" >10.1021/acsami.5c01924</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Tuning of MoS2 Photoluminescence in Heterostructures with CrSBr

Popis výsledku v původním jazyce

Monolayers of semiconducting transition metal dichalcogenides (TMDCs) are known for their unique excitonic photoluminescence (PL), which can be tuned by interfacing them with other materials. However, integrating TMDCs into van der Waals heterostructures often results in a significant quenching of the PL because of an increased rate of nonradiative recombination processes. We demonstrate a wide-range tuning of the PL intensity of monolayer MoS2 interfaced with another layered semiconductor, CrSBr. We discover that a thin CrSBr up to approximate to 20 nm in thickness enhances the PL of MoS2, while a thicker material causes PL quenching, which is associated with changes in the excitonic makeup driven by the charge redistribution in the CrSBr/MoS2 heterostructure. Transport measurements, Kelvin probe force microscopy, and first-principles calculations indicate that this charge redistribution most likely causes n- to p-type doping transition of MoS2 upon contact with CrSBr, facilitated by the type II band alignment and the tendency of CrSBr to act as an electron sink. Furthermore, we fabricate an efficient AC-regime photodetector with a responsivity of 10(5) A/W from a MoS2/CrSBr heterostructure.

Název v anglickém jazyce

Tuning of MoS2 Photoluminescence in Heterostructures with CrSBr

Popis výsledku anglicky

Monolayers of semiconducting transition metal dichalcogenides (TMDCs) are known for their unique excitonic photoluminescence (PL), which can be tuned by interfacing them with other materials. However, integrating TMDCs into van der Waals heterostructures often results in a significant quenching of the PL because of an increased rate of nonradiative recombination processes. We demonstrate a wide-range tuning of the PL intensity of monolayer MoS2 interfaced with another layered semiconductor, CrSBr. We discover that a thin CrSBr up to approximate to 20 nm in thickness enhances the PL of MoS2, while a thicker material causes PL quenching, which is associated with changes in the excitonic makeup driven by the charge redistribution in the CrSBr/MoS2 heterostructure. Transport measurements, Kelvin probe force microscopy, and first-principles calculations indicate that this charge redistribution most likely causes n- to p-type doping transition of MoS2 upon contact with CrSBr, facilitated by the type II band alignment and the tendency of CrSBr to act as an electron sink. Furthermore, we fabricate an efficient AC-regime photodetector with a responsivity of 10(5) A/W from a MoS2/CrSBr heterostructure.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10403 - Physical chemistry

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2025

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

ACS Applied Materials and Interfaces

ISSN

1944-8244

e-ISSN

1944-8252

Svazek periodika

17

Číslo periodika v rámci svazku

17

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

9

Strana od-do

25693-25701

Kód UT WoS článku

001468413600001

EID výsledku v databázi Scopus

2-s2.0-105004049535