Characterizing Interlayer Excitons by Spectral Signature in Scattering Visible Near-Field Microscopy

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61388955%3A_____%2F25%3A00637303" target="_blank" >RIV/61388955:_____/25:00637303 - isvavai.cz</a>

Výsledek na webu

<a href="https://hdl.handle.net/11104/0368217" target="_blank" >https://hdl.handle.net/11104/0368217</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1021/acs.jpclett.5c01052" target="_blank" >10.1021/acs.jpclett.5c01052</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Characterizing Interlayer Excitons by Spectral Signature in Scattering Visible Near-Field Microscopy

Popis výsledku v původním jazyce

Interlayer excitons (IXs) in van der Waals heterostructures exhibit unique optical properties due to their spatially separated charge carriers. However, the weak oscillator strength and radiative broadening of IXs make them difficult to detect with conventional absorption spectroscopy. Here, we use scattering-type scanning near-field optical microscopy (s-SNOM) to directly probe the dielectric response at the nanoscale. We first validate this approach by measuring the B-exciton in a four-layer MoS2 sample, where ion irradiation introduced defect-induced broadening. Extending this method to a MoSe2/WSe2 heterostructure, we observe a Lorentzian resonance at 1.35 eV, characteristic of interlayer excitons, with broadening dominated by nonradiative decay. These results demonstrate the capability of s-SNOM to image and characterize weak excitonic resonances at the nanoscale, overcoming the limitations of conventional techniques and providing new insights into localized exciton dynamics in 2D heterostructures.

Název v anglickém jazyce

Characterizing Interlayer Excitons by Spectral Signature in Scattering Visible Near-Field Microscopy

Popis výsledku anglicky

Interlayer excitons (IXs) in van der Waals heterostructures exhibit unique optical properties due to their spatially separated charge carriers. However, the weak oscillator strength and radiative broadening of IXs make them difficult to detect with conventional absorption spectroscopy. Here, we use scattering-type scanning near-field optical microscopy (s-SNOM) to directly probe the dielectric response at the nanoscale. We first validate this approach by measuring the B-exciton in a four-layer MoS2 sample, where ion irradiation introduced defect-induced broadening. Extending this method to a MoSe2/WSe2 heterostructure, we observe a Lorentzian resonance at 1.35 eV, characteristic of interlayer excitons, with broadening dominated by nonradiative decay. These results demonstrate the capability of s-SNOM to image and characterize weak excitonic resonances at the nanoscale, overcoming the limitations of conventional techniques and providing new insights into localized exciton dynamics in 2D heterostructures.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10403 - Physical chemistry

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2025

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Physical Chemistry Letters

ISSN

1948-7185

e-ISSN

—

Svazek periodika

16

Číslo periodika v rámci svazku

27

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

8

Strana od-do

6960-6967

Kód UT WoS článku

001520228100001

EID výsledku v databázi Scopus

2-s2.0-105009752094