Nanoimaging of Orientational Defects in Semiconducting Organic Films
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60076658%3A12310%2F21%3A43903203" target="_blank" >RIV/60076658:12310/21:43903203 - isvavai.cz</a>
Nalezeny alternativní kódy
RIV/00216224:14310/21:00119566
Výsledek na webu
<a href="https://pubs.acs.org/doi/full/10.1021/acs.jpcc.1c00059" target="_blank" >https://pubs.acs.org/doi/full/10.1021/acs.jpcc.1c00059</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1021/acs.jpcc.1c00059" target="_blank" >10.1021/acs.jpcc.1c00059</a>
Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
Nanoimaging of Orientational Defects in Semiconducting Organic Films
Popis výsledku v původním jazyce
The development of defect analysis for inorganic semiconductors in the past century paved the way for the success story of today's electronics. By analogy, defect analysis plays a critical role in developing and improving devices based on organic molecular semiconductors. However, because of weak molecular interactions, absent in inorganic semiconductors, device-relevant thin organic films are susceptible to the formation of defects in the molecular orientation, which in turn have a profound impact on the performance in the optoelectronic applications. To address this problem, we broaden the applicability of scattering-type scanning near-field optical microscopy (s-SNOM) and utilize the light-induced anisotropic response of vibrational modes to reveal the defects in molecular orientation. We show that in the case of molecular islands with steep crystal facets only the scattered s-SNOM optical amplitude can be exploited to describe the molecular arrangement reliably, while the phase-based analysis leads to artifacts. The presented s-SNOM analysis of molecular defects can be universally applied to diverse topographies, even at the nanoscale.
Název v anglickém jazyce
Nanoimaging of Orientational Defects in Semiconducting Organic Films
Popis výsledku anglicky
The development of defect analysis for inorganic semiconductors in the past century paved the way for the success story of today's electronics. By analogy, defect analysis plays a critical role in developing and improving devices based on organic molecular semiconductors. However, because of weak molecular interactions, absent in inorganic semiconductors, device-relevant thin organic films are susceptible to the formation of defects in the molecular orientation, which in turn have a profound impact on the performance in the optoelectronic applications. To address this problem, we broaden the applicability of scattering-type scanning near-field optical microscopy (s-SNOM) and utilize the light-induced anisotropic response of vibrational modes to reveal the defects in molecular orientation. We show that in the case of molecular islands with steep crystal facets only the scattered s-SNOM optical amplitude can be exploited to describe the molecular arrangement reliably, while the phase-based analysis leads to artifacts. The presented s-SNOM analysis of molecular defects can be universally applied to diverse topographies, even at the nanoscale.
Klasifikace
Druh
J<sub>imp</sub> - Článek v periodiku v databázi Web of Science
CEP obor
—
OECD FORD obor
10403 - Physical chemistry
Návaznosti výsledku
Projekt
Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.
Návaznosti
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Ostatní
Rok uplatnění
2021
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Údaje specifické pro druh výsledku
Název periodika
Journal of Physical Chemistry C
ISSN
1932-7447
e-ISSN
—
Svazek periodika
125
Číslo periodika v rámci svazku
17
Stát vydavatele periodika
US - Spojené státy americké
Počet stran výsledku
7
Strana od-do
9229-9235
Kód UT WoS článku
000648873500031
EID výsledku v databázi Scopus
2-s2.0-85106413466