Directional Charge Transport in Layered Two-Dimensional Triazine-Based Graphitic Carbon Nitride

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61388963%3A_____%2F19%3A00508576" target="_blank" >RIV/61388963:_____/19:00508576 - isvavai.cz</a>

Výsledek na webu

<a href="https://onlinelibrary.wiley.com/doi/abs/10.1002/anie.201902314" target="_blank" >https://onlinelibrary.wiley.com/doi/abs/10.1002/anie.201902314</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1002/anie.201902314" target="_blank" >10.1002/anie.201902314</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Directional Charge Transport in Layered Two-Dimensional Triazine-Based Graphitic Carbon Nitride

Popis výsledku v původním jazyce

Triazine-based graphitic carbon nitride (TGCN) is the most recent addition to the family of graphene-type, two-dimensional, and metal-free materials. Although hailed as a promising low-band-gap semiconductor for electronic applications, so far, only its structure and optical properties have been known. Here, we combine direction-dependent electrical measurements and time-resolved optical spectroscopy to determine the macroscopic conductivity and microscopic charge-carrier mobilities in this layered material beyond graphene. Electrical conductivity along the basal plane of TGCN is 65 times lower than through the stacked layers, as opposed to graphite. Furthermore, we develop a model for this charge-transport behavior based on observed carrier dynamics and random-walk simulations. Our combined methods provide a path towards intrinsic charge transport in a direction-dependent layered semiconductor for applications in field-effect transistors (FETs) and sensors.

Název v anglickém jazyce

Directional Charge Transport in Layered Two-Dimensional Triazine-Based Graphitic Carbon Nitride

Popis výsledku anglicky

Triazine-based graphitic carbon nitride (TGCN) is the most recent addition to the family of graphene-type, two-dimensional, and metal-free materials. Although hailed as a promising low-band-gap semiconductor for electronic applications, so far, only its structure and optical properties have been known. Here, we combine direction-dependent electrical measurements and time-resolved optical spectroscopy to determine the macroscopic conductivity and microscopic charge-carrier mobilities in this layered material beyond graphene. Electrical conductivity along the basal plane of TGCN is 65 times lower than through the stacked layers, as opposed to graphite. Furthermore, we develop a model for this charge-transport behavior based on observed carrier dynamics and random-walk simulations. Our combined methods provide a path towards intrinsic charge transport in a direction-dependent layered semiconductor for applications in field-effect transistors (FETs) and sensors.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10403 - Physical chemistry

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2019

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Angewandte Chemie - International Edition

ISSN

1433-7851

e-ISSN

—

Svazek periodika

58

Číslo periodika v rámci svazku

28

Stát vydavatele periodika

DE - Spolková republika Německo

Počet stran výsledku

5

Strana od-do

9394-9398

Kód UT WoS článku

000476610900011

EID výsledku v databázi Scopus

2-s2.0-85067385515