Electrosynthesis of Ru (II)-Polypyridyl Oligomeric Films on ITO Electrode for Two Terminal Non-Volatile Memory Devices and Neuromorphic Computing

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61388963%3A_____%2F25%3A00637629" target="_blank" >RIV/61388963:_____/25:00637629 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1002/smtd.202401911" target="_blank" >https://doi.org/10.1002/smtd.202401911</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1002/smtd.202401911" target="_blank" >10.1002/smtd.202401911</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Electrosynthesis of Ru (II)-Polypyridyl Oligomeric Films on ITO Electrode for Two Terminal Non-Volatile Memory Devices and Neuromorphic Computing

Popis výsledku v původním jazyce

Molecular electronics exhibiting resistive-switching memory features hold great promise for the next generation of digital technology. In this work, electrosynthesis of ruthenium polypyridyl nanoscale oligomeric films is demonstrated on an indium tin oxide (ITO) electrode followed by an ITO top contact deposition yielding large-scale (junction area = 0.7 x 0.7 cm(2)) two terminal molecular junctions. The molecular junctions exhibit non-volatile resistive switching at a relatively lower operational voltage, +/- 1 V, high ON/OFF electrical current ratio (approximate to 10(3)), low-energy consumption (SET/RESET = 27.94/14400 nJ), good cyclic stability (>300 cycles), and switching speed (SET/RESET = 25 ms/20 ms). A computational study suggests that accessible frontier molecular orbitals of metal-complex to the Fermi level of ITO electrodes facilitate charge transport at a relatively lower bias followed by a filamentformation. An extensive analysis is performed of the performance of binary neural networks exploiting the current-voltage features of the devices as binary synaptic weights and exploring their potential for neuromorphic logic-in-memory implementation of IMPLICATION (IMPLY) operation which can realize universal gates. The comprehensive analysis indicates that the proposed redox-active complex-based memory device may be a promising candidate for high-density data storage, energy-efficient implementation of neuromorphic networks with software-level accuracy, and logic-in-memory implementations.

Název v anglickém jazyce

Electrosynthesis of Ru (II)-Polypyridyl Oligomeric Films on ITO Electrode for Two Terminal Non-Volatile Memory Devices and Neuromorphic Computing

Popis výsledku anglicky

Molecular electronics exhibiting resistive-switching memory features hold great promise for the next generation of digital technology. In this work, electrosynthesis of ruthenium polypyridyl nanoscale oligomeric films is demonstrated on an indium tin oxide (ITO) electrode followed by an ITO top contact deposition yielding large-scale (junction area = 0.7 x 0.7 cm(2)) two terminal molecular junctions. The molecular junctions exhibit non-volatile resistive switching at a relatively lower operational voltage, +/- 1 V, high ON/OFF electrical current ratio (approximate to 10(3)), low-energy consumption (SET/RESET = 27.94/14400 nJ), good cyclic stability (>300 cycles), and switching speed (SET/RESET = 25 ms/20 ms). A computational study suggests that accessible frontier molecular orbitals of metal-complex to the Fermi level of ITO electrodes facilitate charge transport at a relatively lower bias followed by a filamentformation. An extensive analysis is performed of the performance of binary neural networks exploiting the current-voltage features of the devices as binary synaptic weights and exploring their potential for neuromorphic logic-in-memory implementation of IMPLICATION (IMPLY) operation which can realize universal gates. The comprehensive analysis indicates that the proposed redox-active complex-based memory device may be a promising candidate for high-density data storage, energy-efficient implementation of neuromorphic networks with software-level accuracy, and logic-in-memory implementations.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10403 - Physical chemistry

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2025

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Small Methods

ISSN

2366-9608

e-ISSN

2366-9608

Svazek periodika

9

Číslo periodika v rámci svazku

7

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

14

Strana od-do

2401911

Kód UT WoS článku

001404448300001

EID výsledku v databázi Scopus

2-s2.0-85216086764