Preparation of heterogenous copper-titanium oxides for chemiresistor applications
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61388980%3A_____%2F20%3A00538506" target="_blank" >RIV/61388980:_____/20:00538506 - isvavai.cz</a>
Nalezeny alternativní kódy
RIV/67985858:_____/20:00538349 RIV/67985882:_____/20:00538349 RIV/61389005:_____/20:00538349
Výsledek na webu
<a href="http://dx.doi.org/10.1016/j.matpr.2020.05.061" target="_blank" >http://dx.doi.org/10.1016/j.matpr.2020.05.061</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.matpr.2020.05.061" target="_blank" >10.1016/j.matpr.2020.05.061</a>
Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
Preparation of heterogenous copper-titanium oxides for chemiresistor applications
Popis výsledku v původním jazyce
Metal oxide based gas sensors (MOS) found a wide application as modular parts in microelectronic devices due to their technological compatibility, low cost and outstanding sensing capabilities to different chemical species. The functionality of such chemiresistors consists of a change of the electric resistance/impedance of a semiconducting sensitive layer when gases with either oxidizing or reducing properties appear in the surrounding atmosphere. Earlier, the majority of the investigated chemiresistors were based on single phase, homogenous semiconductors. The combination of two different phases and hence the implementation of heterojunctions (HJs) on chemiresistors offers a way to increase the sensor performance, especially the sensitivity of the sensor. In this work, chemiresistors based on CuO-TiO2 acting as p-n heterojunction were developed. Thin sensitive layers were deposited by a two-step process. Cu Ti thin layers were prepared by ion beam sputtering using an Ar ion beam and, subsequently, oxidized by thermal annealing in air at 400 degrees C for 7 h. The stoichiometry of the metallic films was analyzed by the Rutherford Back-scattering (RBS) using 2 MeV alpha-particles. The gas sensing properties of the oxidic thin films (deposited on prefabricated substrates containing interdigital electrodes) were analyzed in an atmosphere containing 100 ppm of either methanol, hydrogen and acetaldehyde or 10.6 ppm of nitrogen dioxide.
Název v anglickém jazyce
Preparation of heterogenous copper-titanium oxides for chemiresistor applications
Popis výsledku anglicky
Metal oxide based gas sensors (MOS) found a wide application as modular parts in microelectronic devices due to their technological compatibility, low cost and outstanding sensing capabilities to different chemical species. The functionality of such chemiresistors consists of a change of the electric resistance/impedance of a semiconducting sensitive layer when gases with either oxidizing or reducing properties appear in the surrounding atmosphere. Earlier, the majority of the investigated chemiresistors were based on single phase, homogenous semiconductors. The combination of two different phases and hence the implementation of heterojunctions (HJs) on chemiresistors offers a way to increase the sensor performance, especially the sensitivity of the sensor. In this work, chemiresistors based on CuO-TiO2 acting as p-n heterojunction were developed. Thin sensitive layers were deposited by a two-step process. Cu Ti thin layers were prepared by ion beam sputtering using an Ar ion beam and, subsequently, oxidized by thermal annealing in air at 400 degrees C for 7 h. The stoichiometry of the metallic films was analyzed by the Rutherford Back-scattering (RBS) using 2 MeV alpha-particles. The gas sensing properties of the oxidic thin films (deposited on prefabricated substrates containing interdigital electrodes) were analyzed in an atmosphere containing 100 ppm of either methanol, hydrogen and acetaldehyde or 10.6 ppm of nitrogen dioxide.
Klasifikace
Druh
D - Stať ve sborníku
CEP obor
—
OECD FORD obor
10402 - Inorganic and nuclear chemistry
Návaznosti výsledku
Projekt
Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.
Návaznosti
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Ostatní
Rok uplatnění
2020
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Údaje specifické pro druh výsledku
Název statě ve sborníku
Materials Today: Proceedings
ISBN
—
ISSN
2214-7853
e-ISSN
—
Počet stran výsledku
5
Strana od-do
"Roč. 33 (2020)"
Název nakladatele
Elsevier
Místo vydání
Amsterdam
Místo konání akce
Warsaw
Datum konání akce
16. 9. 2019
Typ akce podle státní příslušnosti
EUR - Evropská akce
Kód UT WoS článku
000599991700018