Radiation-induced phase separation in nanostructured Hf-In-C ternary thin films under irradiation with 200 keV Ar+ ion beam

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61388980%3A_____%2F22%3A00556898" target="_blank" >RIV/61388980:_____/22:00556898 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68378271:_____/22:00562898 RIV/61389005:_____/22:00556898 RIV/68407700:21110/22:00361587

Výsledek na webu

<a href="https://doi.org/10.1080/10420150.2022.2049788" target="_blank" >https://doi.org/10.1080/10420150.2022.2049788</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1080/10420150.2022.2049788" target="_blank" >10.1080/10420150.2022.2049788</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Radiation-induced phase separation in nanostructured Hf-In-C ternary thin films under irradiation with 200 keV Ar+ ion beam

Popis výsledku v původním jazyce

Thin films consisting of 17 groups of Hf/In/C multilayers cyclically alternating layers of Hf, In and C each with a thickness of 4-5 nm were synthesized by ion sputtering using a 25 keV Ar+ ion beam with 400 mu A current and targets made of pure hafnium, indium and carbon. The films were subsequently annealed in vacuum at 120 degrees C for 24 hours to induce intermixing of elements phases, their interaction, and formation of the Hf-In-C nanostructures (including the Hf2InC MAX phase). After fabrication, a part of the pristine (as deposited) samples was irradiated by 200 keV Ar+ ions at high fluences 10(15) and 10(17) cm(-2). Both samples (as prepared and irradiated) were analyzed by IBA nuclear analytical methods, as well as by AFM and TEM microscopic techniques, and by XPS and profilometry to understand the microstructural evolution. Moreover, nanoindentation analysis was performed to assess the effects of ion irradiation on the microstructure and mechanical properties of the films. The experimental results showed that thin Hf-In-C nanostructured films can be formed by ion sputtering with promising mechanical parameters. The irradiated Hf-In-C films were found to be resistant only up to a fluence of about 10(15) Ar cm(-2). At higher fluences it degrades, and Hf2InC transforms to the binary HfC0.95 phase due to sublimation of In. At 10(17) cm(-2) the original matrix (including M(2)AX) is destroyed, and instead, a mixture of MX binary phases (e.g. HfC0.95) and crystalline oxides (e.g. HfO2 and In2O3) are formed.

Název v anglickém jazyce

Radiation-induced phase separation in nanostructured Hf-In-C ternary thin films under irradiation with 200 keV Ar+ ion beam

Popis výsledku anglicky

Thin films consisting of 17 groups of Hf/In/C multilayers cyclically alternating layers of Hf, In and C each with a thickness of 4-5 nm were synthesized by ion sputtering using a 25 keV Ar+ ion beam with 400 mu A current and targets made of pure hafnium, indium and carbon. The films were subsequently annealed in vacuum at 120 degrees C for 24 hours to induce intermixing of elements phases, their interaction, and formation of the Hf-In-C nanostructures (including the Hf2InC MAX phase). After fabrication, a part of the pristine (as deposited) samples was irradiated by 200 keV Ar+ ions at high fluences 10(15) and 10(17) cm(-2). Both samples (as prepared and irradiated) were analyzed by IBA nuclear analytical methods, as well as by AFM and TEM microscopic techniques, and by XPS and profilometry to understand the microstructural evolution. Moreover, nanoindentation analysis was performed to assess the effects of ion irradiation on the microstructure and mechanical properties of the films. The experimental results showed that thin Hf-In-C nanostructured films can be formed by ion sputtering with promising mechanical parameters. The irradiated Hf-In-C films were found to be resistant only up to a fluence of about 10(15) Ar cm(-2). At higher fluences it degrades, and Hf2InC transforms to the binary HfC0.95 phase due to sublimation of In. At 10(17) cm(-2) the original matrix (including M(2)AX) is destroyed, and instead, a mixture of MX binary phases (e.g. HfC0.95) and crystalline oxides (e.g. HfO2 and In2O3) are formed.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10402 - Inorganic and nuclear chemistry

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2022

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Radiation Effects and Defects in Solids

ISSN

1042-0150

e-ISSN

1029-4953

Svazek periodika

177

Číslo periodika v rámci svazku

1-2

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

24

Strana od-do

137-160

Kód UT WoS článku

000770467000001

EID výsledku v databázi Scopus

2-s2.0-85126828743