Novel growth process in the synthesis of heavily phosphorus-doped nanocrystalline diamond layers

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61388998%3A_____%2F25%3A00618599" target="_blank" >RIV/61388998:_____/25:00618599 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68378271:_____/25:00618599

Výsledek na webu

<a href="https://doi.org/10.1016/j.diamond.2025.112118" target="_blank" >https://doi.org/10.1016/j.diamond.2025.112118</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.diamond.2025.112118" target="_blank" >10.1016/j.diamond.2025.112118</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Novel growth process in the synthesis of heavily phosphorus-doped nanocrystalline diamond layers

Popis výsledku v původním jazyce

Phosphorus-doped diamond (PDD) offers significant potential for innovative applications, yet traditional growth techniques face difficulties in achieving high levels of phosphorus incorporation. This study presents a novel growth process to enhance phosphorus incorporation into diamond layers through transient plasma conditions under CH4 gas pulsing. Unlike conventional approaches, heavily PDD layers ([P] ∼3 × 1020 atoms/cm3) are obtained at low phosphine concentrations by utilizing phosphorus contamination as the primary source of PH radicals. Time-resolved optical emission spectroscopy analysis reveals that, when the CH4 gas flow is turned off, the distinct relaxation dynamics of CH and PH radicals promote a non-equilibrium plasma state in which sufficient quantities of both radicals coexist. Additionally, the enhanced hydrogen etching process leads to the formation of faceted crystalline grains with reduced nucleation density and fewer non-diamond compounds. In contrast to the fine grains typically observed in conventional heavily PDD nanocrystalline layers, the phosphorus concentration exhibits a proportional trend with grain size, suggesting that phosphorus is primarily incorporated within the diamond grains rather than at grain boundaries. These findings pave the way for achieving heavily PDD layers with precise microstructural control, supporting the development of advanced devices.

Název v anglickém jazyce

Novel growth process in the synthesis of heavily phosphorus-doped nanocrystalline diamond layers

Popis výsledku anglicky

Phosphorus-doped diamond (PDD) offers significant potential for innovative applications, yet traditional growth techniques face difficulties in achieving high levels of phosphorus incorporation. This study presents a novel growth process to enhance phosphorus incorporation into diamond layers through transient plasma conditions under CH4 gas pulsing. Unlike conventional approaches, heavily PDD layers ([P] ∼3 × 1020 atoms/cm3) are obtained at low phosphine concentrations by utilizing phosphorus contamination as the primary source of PH radicals. Time-resolved optical emission spectroscopy analysis reveals that, when the CH4 gas flow is turned off, the distinct relaxation dynamics of CH and PH radicals promote a non-equilibrium plasma state in which sufficient quantities of both radicals coexist. Additionally, the enhanced hydrogen etching process leads to the formation of faceted crystalline grains with reduced nucleation density and fewer non-diamond compounds. In contrast to the fine grains typically observed in conventional heavily PDD nanocrystalline layers, the phosphorus concentration exhibits a proportional trend with grain size, suggesting that phosphorus is primarily incorporated within the diamond grains rather than at grain boundaries. These findings pave the way for achieving heavily PDD layers with precise microstructural control, supporting the development of advanced devices.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10102 - Applied mathematics

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2025

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Diamond and Related Materials

ISSN

0925-9635

e-ISSN

1879-0062

Svazek periodika

154

Číslo periodika v rámci svazku

April

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

11

Strana od-do

112118

Kód UT WoS článku

001430878200001

EID výsledku v databázi Scopus

2-s2.0-85217925946