Rutherford backscatering spectroscopy of optically silver doped amorphous chalcogenides.

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61389005%3A_____%2F03%3A49033171" target="_blank" >RIV/61389005:_____/03:49033171 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Rutherford backscatering spectroscopy of optically silver doped amorphous chalcogenides.

Popis výsledku v původním jazyce

Kinetics of optically-induced reaction between silver and Ge30S70 films was measured by monitoring the change in thickness of the undoped chalcogenide using a modified computer-controlled reflectivity technique. Silver concentration profiles during optically-induced solid state reaction were traced by the means of Rutherford backscattering spectroscopy (RBS). The composition of the Ge-S films was chosen to be Ge30S70 which is the most favourable for optically-induced solid state reaction, because it yields a homogeneous photodoped products. A new technique of step-by-step optically-induced dissolution and diffusion of Ag into Ge30S70 amorphous films, which has allowed to design films with exact silver concentration and to study their properties, is reported. The host Ge30S70 films were photodoped by consecutive dissolving a thin (similar to 20 nm) layer of silver, which resulted in homogeneous films of good optical quality. The silver concentration of the films ranged between 0 and 31.

Název v anglickém jazyce

Rutherford backscatering spectroscopy of optically silver doped amorphous chalcogenides.

Popis výsledku anglicky

Kinetics of optically-induced reaction between silver and Ge30S70 films was measured by monitoring the change in thickness of the undoped chalcogenide using a modified computer-controlled reflectivity technique. Silver concentration profiles during optically-induced solid state reaction were traced by the means of Rutherford backscattering spectroscopy (RBS). The composition of the Ge-S films was chosen to be Ge30S70 which is the most favourable for optically-induced solid state reaction, because it yields a homogeneous photodoped products. A new technique of step-by-step optically-induced dissolution and diffusion of Ag into Ge30S70 amorphous films, which has allowed to design films with exact silver concentration and to study their properties, is reported. The host Ge30S70 films were photodoped by consecutive dissolving a thin (similar to 20 nm) layer of silver, which resulted in homogeneous films of good optical quality. The silver concentration of the films ranged between 0 and 31.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

<a href="/cs/project/KSK1010104" target="_blank" >KSK1010104: Fyzika kondenzovaných systémů a materiálový výzkum</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2003

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

CZECHOSLOVAK JOURNAL OF PHYSICS

ISSN

0925-9635

e-ISSN

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Svazek periodika

53

Číslo periodika v rámci svazku

1

Stát vydavatele periodika

CZ - Česká republika

Počet stran výsledku

10

Strana od-do

"A247"-"A256"

Kód UT WoS článku

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EID výsledku v databázi Scopus

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