Study of electric field in SiPM active volume by the volt-farad characteristics analysis

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61389005%3A_____%2F19%3A00532528" target="_blank" >RIV/61389005:_____/19:00532528 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1051/epjconf/201920407008" target="_blank" >http://dx.doi.org/10.1051/epjconf/201920407008</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1051/epjconf/201920407008" target="_blank" >10.1051/epjconf/201920407008</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Study of electric field in SiPM active volume by the volt-farad characteristics analysis

Popis výsledku v původním jazyce

The purpose of this study is to understand the change of the SiPM structure after irradiation. We compared the profile of the electric field in the SiPM (KETEK) active region for ten not-irradiated and irradiated detectors. The standard method of measurement of C-V characteristics was applied using two configurations (serial and parallel circuit) to exclude the influence of the serial resistance. Dependencies of capacitance on the frequency were studied in the range from 10 to 1000 KHz. For non-irradiated detectors we detected in CV characteristics the local instability basically connected with accumulation of charge on boundary optical isolation-silicon. In addition, the hysteresis of CV characteristics was detected. For irradiated detectors the local instability was visible as well but the hysteresis of CV characteristics was not detected. The results demonstrate that the applied method can be used for the relative analysis of how SiPM active region properties changed after irradiation.

Název v anglickém jazyce

Study of electric field in SiPM active volume by the volt-farad characteristics analysis

Popis výsledku anglicky

The purpose of this study is to understand the change of the SiPM structure after irradiation. We compared the profile of the electric field in the SiPM (KETEK) active region for ten not-irradiated and irradiated detectors. The standard method of measurement of C-V characteristics was applied using two configurations (serial and parallel circuit) to exclude the influence of the serial resistance. Dependencies of capacitance on the frequency were studied in the range from 10 to 1000 KHz. For non-irradiated detectors we detected in CV characteristics the local instability basically connected with accumulation of charge on boundary optical isolation-silicon. In addition, the hysteresis of CV characteristics was detected. For irradiated detectors the local instability was visible as well but the hysteresis of CV characteristics was not detected. The results demonstrate that the applied method can be used for the relative analysis of how SiPM active region properties changed after irradiation.

Druh

D - Stať ve sborníku

CEP obor

—

OECD FORD obor

10304 - Nuclear physics

Projekt

<a href="/cs/project/LTT18021" target="_blank" >LTT18021: Spolupráce ČR s SÚJV Dubna v teoretické a jaderné fyzice a při využití jaderných metod v dalších oborech</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2019

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

EPJ Web of Conferences

ISBN

—

ISSN

2100-014X

e-ISSN

—

Počet stran výsledku

5

Strana od-do

07008

Název nakladatele

EDP Sciences

Místo vydání

Les Ulis

Místo konání akce

Dubna

Datum konání akce

17. 9. 2018

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

000568016300092