Multilayered Cu-Ti deposition on silicon substrates for chemiresistor applications

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61389005%3A_____%2F20%3A00534005" target="_blank" >RIV/61389005:_____/20:00534005 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/67985882:_____/20:00534005

Výsledek na webu

<a href="https://doi.org/10.1080/10426507.2020.1804166" target="_blank" >https://doi.org/10.1080/10426507.2020.1804166</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1080/10426507.2020.1804166" target="_blank" >10.1080/10426507.2020.1804166</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Multilayered Cu-Ti deposition on silicon substrates for chemiresistor applications

Popis výsledku v původním jazyce

On the perspective to develop CuO-TiO2MOS, multilayered Cu and Ti thin layers were alternatively deposited on silicon wafers using 25 keV Ar + ion beam sputtering and, subsequently, oxidized by thermal annealing in air at 400 degrees C for 24 h. The deposited films have variable ratios of the Cu and Ti % at. One of the main goal is to obtain such multilayers avoiding the presence of Cu-Ti-O compounds. The samples were characterized in terms of composition (by RBS and SIMS analyses) and morphology (by AFM and SEM investigations). In particular, SIMS maps allows to observe the spatial distribution and thickness of each phase of the Cu/Ti multilayers, and further to observe Cu diffusion and mixing with Ti, as well as phase separation of CuO and TiO(2)in the samples. The reasons of this effect represent an open issue that has to investigated, in order to improve the MOS fabrication.

Název v anglickém jazyce

Multilayered Cu-Ti deposition on silicon substrates for chemiresistor applications

Popis výsledku anglicky

On the perspective to develop CuO-TiO2MOS, multilayered Cu and Ti thin layers were alternatively deposited on silicon wafers using 25 keV Ar + ion beam sputtering and, subsequently, oxidized by thermal annealing in air at 400 degrees C for 24 h. The deposited films have variable ratios of the Cu and Ti % at. One of the main goal is to obtain such multilayers avoiding the presence of Cu-Ti-O compounds. The samples were characterized in terms of composition (by RBS and SIMS analyses) and morphology (by AFM and SEM investigations). In particular, SIMS maps allows to observe the spatial distribution and thickness of each phase of the Cu/Ti multilayers, and further to observe Cu diffusion and mixing with Ti, as well as phase separation of CuO and TiO(2)in the samples. The reasons of this effect represent an open issue that has to investigated, in order to improve the MOS fabrication.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10402 - Inorganic and nuclear chemistry

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2020

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Phosphorus, Sulfur and Silicon and the Related Elements

ISSN

1042-6507

e-ISSN

—

Svazek periodika

195

Číslo periodika v rámci svazku

11

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

4

Strana od-do

932-935

Kód UT WoS článku

000572478600011

EID výsledku v databázi Scopus

2-s2.0-85091489645