Synthesis of Cu-Ti thin film multilayers on silicon substrates

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61389005%3A_____%2F21%3A00541428" target="_blank" >RIV/61389005:_____/21:00541428 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/67985882:_____/21:00541428

Výsledek na webu

<a href="https://doi.org/10.1007/s12034-020-02346-6" target="_blank" >https://doi.org/10.1007/s12034-020-02346-6</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1007/s12034-020-02346-6" target="_blank" >10.1007/s12034-020-02346-6</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Synthesis of Cu-Ti thin film multilayers on silicon substrates

Popis výsledku v původním jazyce

Metal-oxide-based sensors (MOS) can be used for several technological applications in microelectronics, due to their low cost and sensitive capabilities to different chemical species. On the perspective to develop CuO-TiO2 MOS, our goal was to obtain a homogeneous intermixing of Cu and Ti in the bulk structure of the detectors, exploring the most promising combination between such elements and avoiding the presence of Cu-Ti-O compounds. To do that, several Cu and Ti thin layers were alternatively deposited by Ar+ sputtering on silicon wafers and, subsequently, oxidized by thermal annealing. The obtained samples were characterized in terms of %at. Cu-Ti ratios (by RBS and SIMS analyses) and morphology (by AFM and SEM investigations), showing the abundance ratios of such elements in the whole structure. In particular, SIMS maps allowed to study the spatial distribution and thickness of each phase of the Cu-Ti multilayers and further to observe the Cu diffusion and the mixing with Ti, as well as phase separation of CuO and TiO2 in the samples. This unwanted effect represents an open issue that has to be investigated, in order to improve the MOS fabrication.

Název v anglickém jazyce

Synthesis of Cu-Ti thin film multilayers on silicon substrates

Popis výsledku anglicky

Metal-oxide-based sensors (MOS) can be used for several technological applications in microelectronics, due to their low cost and sensitive capabilities to different chemical species. On the perspective to develop CuO-TiO2 MOS, our goal was to obtain a homogeneous intermixing of Cu and Ti in the bulk structure of the detectors, exploring the most promising combination between such elements and avoiding the presence of Cu-Ti-O compounds. To do that, several Cu and Ti thin layers were alternatively deposited by Ar+ sputtering on silicon wafers and, subsequently, oxidized by thermal annealing. The obtained samples were characterized in terms of %at. Cu-Ti ratios (by RBS and SIMS analyses) and morphology (by AFM and SEM investigations), showing the abundance ratios of such elements in the whole structure. In particular, SIMS maps allowed to study the spatial distribution and thickness of each phase of the Cu-Ti multilayers and further to observe the Cu diffusion and the mixing with Ti, as well as phase separation of CuO and TiO2 in the samples. This unwanted effect represents an open issue that has to be investigated, in order to improve the MOS fabrication.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20501 - Materials engineering

Projekt

<a href="/cs/project/GA19-02804S" target="_blank" >GA19-02804S: Nanostrukturované heteropřechody pro chemirezistory</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2021

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Bulletin of Materials Science

ISSN

0250-4707

e-ISSN

0973-7669

Svazek periodika

44

Číslo periodika v rámci svazku

1

Stát vydavatele periodika

IN - Indická republika

Počet stran výsledku

8

Strana od-do

50

Kód UT WoS článku

000621448300001

EID výsledku v databázi Scopus

2-s2.0-85101679529