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Radiation-induced defect accumulation and annealing in Si-implanted gallium oxide

Identifikátory výsledku

  • Kód výsledku v IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61389005%3A_____%2F22%3A00557036" target="_blank" >RIV/61389005:_____/22:00557036 - isvavai.cz</a>

  • Nalezeny alternativní kódy

    RIV/44555601:13440/22:43897482

  • Výsledek na webu

    <a href="https://doi.org/10.1063/5.0083858" target="_blank" >https://doi.org/10.1063/5.0083858</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1063/5.0083858" target="_blank" >10.1063/5.0083858</a>

Alternativní jazyky

  • Jazyk výsledku

    angličtina

  • Název v původním jazyce

    Radiation-induced defect accumulation and annealing in Si-implanted gallium oxide

  • Popis výsledku v původním jazyce

    Defect accumulation and annealing phenomena in Si-implanted monoclinic gallium oxide (beta-Ga2O3) wafers, having ((2) over bar 01), (010), and (001) orientations, were studied by Rutherford backscattering spectrometry in channeling mode (RBS/c), x-ray diffraction (XRD), and (scanning) transmission electron microscopy [(S)TEM]. Initially, the samples with different surface orientations were implanted with 300 keV Si-28(+)-ions, applying fluences in the range of 1 x 10(14)-2 x 10(16) Si/cm(2), unveiling interesting disorder accumulation kinetics. In particular, the RBS/c, XRD, and (S)TEM combined data suggested that the radiation disorder buildup in Si-implanted beta-Ga2O3 is accompanied by significant strain accumulation, assisting crystalline-to-crystalline phase transitions instead of amorphization. Selected samples having ((2) over bar 01 ) orientation were subjected to isochronal (30 min) anneals in the range of 300-1300 degrees C in air. Systematic RBS/c and XRD characterization of these samples suggested complex structural transformations, which occurred as a function of the fluence and the temperature. Moreover, a detailed (S)TEM analysis of the sample implanted with 2 x 10(16) Si/cm(2) and annealed at 1100 degrees C was enhanced by applying dispersive x-ray and electron energy-loss spectroscopies. The analysis revealed silicon agglomerations in the form of silicon dioxide particles. Signal from silicon was also detected outside of the agglomerates, likely occurring as substitutional Si on Ga sites.

  • Název v anglickém jazyce

    Radiation-induced defect accumulation and annealing in Si-implanted gallium oxide

  • Popis výsledku anglicky

    Defect accumulation and annealing phenomena in Si-implanted monoclinic gallium oxide (beta-Ga2O3) wafers, having ((2) over bar 01), (010), and (001) orientations, were studied by Rutherford backscattering spectrometry in channeling mode (RBS/c), x-ray diffraction (XRD), and (scanning) transmission electron microscopy [(S)TEM]. Initially, the samples with different surface orientations were implanted with 300 keV Si-28(+)-ions, applying fluences in the range of 1 x 10(14)-2 x 10(16) Si/cm(2), unveiling interesting disorder accumulation kinetics. In particular, the RBS/c, XRD, and (S)TEM combined data suggested that the radiation disorder buildup in Si-implanted beta-Ga2O3 is accompanied by significant strain accumulation, assisting crystalline-to-crystalline phase transitions instead of amorphization. Selected samples having ((2) over bar 01 ) orientation were subjected to isochronal (30 min) anneals in the range of 300-1300 degrees C in air. Systematic RBS/c and XRD characterization of these samples suggested complex structural transformations, which occurred as a function of the fluence and the temperature. Moreover, a detailed (S)TEM analysis of the sample implanted with 2 x 10(16) Si/cm(2) and annealed at 1100 degrees C was enhanced by applying dispersive x-ray and electron energy-loss spectroscopies. The analysis revealed silicon agglomerations in the form of silicon dioxide particles. Signal from silicon was also detected outside of the agglomerates, likely occurring as substitutional Si on Ga sites.

Klasifikace

  • Druh

    J<sub>imp</sub> - Článek v periodiku v databázi Web of Science

  • CEP obor

  • OECD FORD obor

    10301 - Atomic, molecular and chemical physics (physics of atoms and molecules including collision, interaction with radiation, magnetic resonances, Mössbauer effect)

Návaznosti výsledku

  • Projekt

    <a href="/cs/project/EF16_013%2F0001812" target="_blank" >EF16_013/0001812: Centrum urychlovačů a jaderných analytických metod - OP</a><br>

  • Návaznosti

    I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Ostatní

  • Rok uplatnění

    2022

  • Kód důvěrnosti údajů

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Údaje specifické pro druh výsledku

  • Název periodika

    Journal of Applied Physics

  • ISSN

    0021-8979

  • e-ISSN

    1089-7550

  • Svazek periodika

    131

  • Číslo periodika v rámci svazku

    12

  • Stát vydavatele periodika

    US - Spojené státy americké

  • Počet stran výsledku

    10

  • Strana od-do

    125701

  • Kód UT WoS článku

    000779491400010

  • EID výsledku v databázi Scopus

    2-s2.0-85127357239