Study of thermal recrystallisation in Si implanted by 0.4-MeV heavy ions

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61389005%3A_____%2F19%3A00508842" target="_blank" >RIV/61389005:_____/19:00508842 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/00216208:11320/19:10398928

Výsledek na webu

<a href="https://doi.org/10.1002/sia.6698" target="_blank" >https://doi.org/10.1002/sia.6698</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1002/sia.6698" target="_blank" >10.1002/sia.6698</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Study of thermal recrystallisation in Si implanted by 0.4-MeV heavy ions

Popis výsledku v původním jazyce

A Si crystal layer on SiO2/Si was implanted using 0.4-MeV Kr+, Ag+, and Au+ at ion fluences of 0.5 x 10(15) to 5.0 x 10(15) cm(-2). Subsequent annealing was performed at temperatures of 450 degrees and 800 degrees for 1 hour. The structural modification in a Si crystal influences ion beam channelling phenomena. Therefore, implanted and annealed samples were investigated by Rutherford backscattering spectrometry under channelling (RBS-C) conditions using an incident beam of 2-MeV He+ from a 3-MV Tandetron in random or in aligned directions. The depth profiles of the implanted atoms and the dislocated Si atom depth profiles in the Si layer were extracted directly from the RBS measurement. The damage accumulation and changes in the crystallographic structure before and after annealing were studied by X-ray diffraction (XRD) analysis. Lattice parameters in modified silicon layers determined by XRD were discussed in connection to RBS-C findings showing the crystalline structure modification depending on ion implantation and annealing parameters.

Název v anglickém jazyce

Study of thermal recrystallisation in Si implanted by 0.4-MeV heavy ions

Popis výsledku anglicky

A Si crystal layer on SiO2/Si was implanted using 0.4-MeV Kr+, Ag+, and Au+ at ion fluences of 0.5 x 10(15) to 5.0 x 10(15) cm(-2). Subsequent annealing was performed at temperatures of 450 degrees and 800 degrees for 1 hour. The structural modification in a Si crystal influences ion beam channelling phenomena. Therefore, implanted and annealed samples were investigated by Rutherford backscattering spectrometry under channelling (RBS-C) conditions using an incident beam of 2-MeV He+ from a 3-MV Tandetron in random or in aligned directions. The depth profiles of the implanted atoms and the dislocated Si atom depth profiles in the Si layer were extracted directly from the RBS measurement. The damage accumulation and changes in the crystallographic structure before and after annealing were studied by X-ray diffraction (XRD) analysis. Lattice parameters in modified silicon layers determined by XRD were discussed in connection to RBS-C findings showing the crystalline structure modification depending on ion implantation and annealing parameters.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10304 - Nuclear physics

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2019

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Surface and Interface Analysis

ISSN

0142-2421

e-ISSN

—

Svazek periodika

51

Číslo periodika v rámci svazku

11

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

8

Strana od-do

1113-1120

Kód UT WoS článku

000484715100001

EID výsledku v databázi Scopus

2-s2.0-85071871905