A study of the structural and magnetic properties of ZnO implanted by Gd ions
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61389005%3A_____%2F14%3A00433018" target="_blank" >RIV/61389005:_____/14:00433018 - isvavai.cz</a>
Nalezeny alternativní kódy
RIV/60461373:22310/14:43897474 RIV/44555601:13440/14:43885853
Výsledek na webu
<a href="http://dx.doi.org/10.1016/j.nimb.2014.02.034" target="_blank" >http://dx.doi.org/10.1016/j.nimb.2014.02.034</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.nimb.2014.02.034" target="_blank" >10.1016/j.nimb.2014.02.034</a>
Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
A study of the structural and magnetic properties of ZnO implanted by Gd ions
Popis výsledku v původním jazyce
The structural and magnetic properties of ZnO (0001) single crystals implanted with 200 keV Gd ions up to a fluence of 5 x 1015 cm(-2) and subsequently annealed at 800 degrees C in various atmospheres were studied. The chemical composition and concentration depth profiles of ion-implanted layers were characterised by Rutherford Back-Scattering spectrometry (RBS) and compared to SRIM simulations. The as-implanted Gd depth profiles were found to be broader than those simulated by SRIM, but the projected range coincided well with that simulated. After annealing at 800 degrees C, the depth profiles became narrower. The structural changes in the layers modified by ion implantation and subsequent annealing were characterised by RBS channelling. The annealingled to partial recrystallisation and a decrease in the number of Gd atoms situated in substitutional positions. Raman spectroscopy showed that the point defects in Zn and O vacancies had been created by implantation and that these defect
Název v anglickém jazyce
A study of the structural and magnetic properties of ZnO implanted by Gd ions
Popis výsledku anglicky
The structural and magnetic properties of ZnO (0001) single crystals implanted with 200 keV Gd ions up to a fluence of 5 x 1015 cm(-2) and subsequently annealed at 800 degrees C in various atmospheres were studied. The chemical composition and concentration depth profiles of ion-implanted layers were characterised by Rutherford Back-Scattering spectrometry (RBS) and compared to SRIM simulations. The as-implanted Gd depth profiles were found to be broader than those simulated by SRIM, but the projected range coincided well with that simulated. After annealing at 800 degrees C, the depth profiles became narrower. The structural changes in the layers modified by ion implantation and subsequent annealing were characterised by RBS channelling. The annealingled to partial recrystallisation and a decrease in the number of Gd atoms situated in substitutional positions. Raman spectroscopy showed that the point defects in Zn and O vacancies had been created by implantation and that these defect
Klasifikace
Druh
J<sub>x</sub> - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
CEP obor
BG - Jaderná, atomová a molekulová fyzika, urychlovače
OECD FORD obor
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Návaznosti výsledku
Projekt
Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.
Návaznosti
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Ostatní
Rok uplatnění
2014
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Údaje specifické pro druh výsledku
Název periodika
Nuclear Instruments & Methods in Physics Research Section B
ISSN
0168-583X
e-ISSN
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Svazek periodika
332
Číslo periodika v rámci svazku
AUG
Stát vydavatele periodika
NL - Nizozemsko
Počet stran výsledku
5
Strana od-do
80-84
Kód UT WoS článku
000339131200018
EID výsledku v databázi Scopus
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