Damage accumulation and structural modification in c-plane and a-plane GaN implanted with 400?keV Kr and Gd ions

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F44555601%3A13440%2F18%3A43893891" target="_blank" >RIV/44555601:13440/18:43893891 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/61389005:_____/18:00497102 RIV/60461373:22310/18:43915726

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.surfcoat.2018.02.097" target="_blank" >http://dx.doi.org/10.1016/j.surfcoat.2018.02.097</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.surfcoat.2018.02.097" target="_blank" >10.1016/j.surfcoat.2018.02.097</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Damage accumulation and structural modification in c-plane and a-plane GaN implanted with 400?keV Kr and Gd ions

Popis výsledku v původním jazyce

GaN is the most actively studied wide-bandgap material, applicable e.g. in short-wavelength optoelectronic devices, high-electron-mobility transistors, and semiconductor lasers. The crystallographic orientation of an implanted crystal can significantly influence the optical properties of the implanted layer, reflecting the rearrangement of the crystal matrix after annealing. The annealing procedure, influencing dynamic recovery, point defect diffusion and large defect stabilisation, depending on the GaN crystal orientation and the used ion implantation parameters, is still an important issue to be studied. We have studied the structural and compositional changes of the GaN-epitaxial-layers of c-plane and a-plane orientations grown by MOVPE and implanted with Gd and Kr ions using the ion energy of 400 keV and ion fluences of 5 x 1014 cmMINUS SIGN 2, 1 x 1015 cmMINUS SIGN 2 and 5 x 1015 cmMINUS SIGN 2 with subsequent annealing at 800 oC in ammonia. Dopant depth profiling was accomplished by Rutherford backscattering spectrometry (RBS). Induced structure disorder and its recovery during subsequent annealing were characterised by RBS channelling and Raman spectroscopy. Ion-implanted c-plane and a-plane GaN exhibit significant differences in damage accumulation simultaneously with post-implantation annealing, inducing a different structural reorganization of the GaN structure in the buried layer depending on the introduced disorder level, i.e. depending on the ion-implantation fluence and ion mass.

Název v anglickém jazyce

Damage accumulation and structural modification in c-plane and a-plane GaN implanted with 400?keV Kr and Gd ions

Popis výsledku anglicky

GaN is the most actively studied wide-bandgap material, applicable e.g. in short-wavelength optoelectronic devices, high-electron-mobility transistors, and semiconductor lasers. The crystallographic orientation of an implanted crystal can significantly influence the optical properties of the implanted layer, reflecting the rearrangement of the crystal matrix after annealing. The annealing procedure, influencing dynamic recovery, point defect diffusion and large defect stabilisation, depending on the GaN crystal orientation and the used ion implantation parameters, is still an important issue to be studied. We have studied the structural and compositional changes of the GaN-epitaxial-layers of c-plane and a-plane orientations grown by MOVPE and implanted with Gd and Kr ions using the ion energy of 400 keV and ion fluences of 5 x 1014 cmMINUS SIGN 2, 1 x 1015 cmMINUS SIGN 2 and 5 x 1015 cmMINUS SIGN 2 with subsequent annealing at 800 oC in ammonia. Dopant depth profiling was accomplished by Rutherford backscattering spectrometry (RBS). Induced structure disorder and its recovery during subsequent annealing were characterised by RBS channelling and Raman spectroscopy. Ion-implanted c-plane and a-plane GaN exhibit significant differences in damage accumulation simultaneously with post-implantation annealing, inducing a different structural reorganization of the GaN structure in the buried layer depending on the introduced disorder level, i.e. depending on the ion-implantation fluence and ion mass.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

S - Specificky vyzkum na vysokych skolach<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2018

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Surface and coatings technology

ISSN

0257-8972

e-ISSN

—

Svazek periodika

2018

Číslo periodika v rámci svazku

355

Stát vydavatele periodika

CH - Švýcarská konfederace

Počet stran výsledku

7

Strana od-do

22-28

Kód UT WoS článku

000449896800006

EID výsledku v databázi Scopus

2-s2.0-85042634118