Damage accumulation and implanted Gd and Au position in a- and c-plane GaN

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61389005%3A_____%2F19%3A00504789" target="_blank" >RIV/61389005:_____/19:00504789 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68378271:_____/19:00504789 RIV/44555601:13440/19:43894726 RIV/60461373:22310/19:43918123 RIV/60461373:22810/19:43918123

Výsledek na webu

<a href="https://doi.org/10.1016/j.tsf.2019.04.035" target="_blank" >https://doi.org/10.1016/j.tsf.2019.04.035</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.tsf.2019.04.035" target="_blank" >10.1016/j.tsf.2019.04.035</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Damage accumulation and implanted Gd and Au position in a- and c-plane GaN

Popis výsledku v původním jazyce

Abstract: (0001) c-plane and (11-20) a-plane GaN epitaxial layers were implanted with 400 keV Au+ and Gd+ ions using ion implantation fluences of 5x10(14), 1x10(15) and 5x10(15) cm(-2). Rutherford Back-Scattering spectrometry in channelling mode (RBS/C) was used to follow the dopant depth profiles and the introduced disorder, the angular dependence of the backscattered ions (angular scans) in c-and a-plane GaN was measured to get insight into structural modification and dopant position in various crystallographic orientations. Defect-accumulation depth profiles exhibited differences for a-and c-plane GaN, with a-plane showing significantly lower accumulated disorder in the buried layer, accompanied by the shift of the maximum damage accumulation into the deeper layer with respect to the theoretical prediction, than c-plane GaN. Angular scans showed channelling preservation in as-implanted samples and better channelling recovery in the annealed a-plane GaN compared to c-plane GaN. The angular scan widths were simulated by FLUX code as well as the half-width modifications of angular scans were discussed in connection to the damage accumulation. Photoluminescence measurement followed in detail yellow band and band edge luminescence decline after the implantation and the recovery of luminescence spectra features after annealing.

Název v anglickém jazyce

Damage accumulation and implanted Gd and Au position in a- and c-plane GaN

Popis výsledku anglicky

Abstract: (0001) c-plane and (11-20) a-plane GaN epitaxial layers were implanted with 400 keV Au+ and Gd+ ions using ion implantation fluences of 5x10(14), 1x10(15) and 5x10(15) cm(-2). Rutherford Back-Scattering spectrometry in channelling mode (RBS/C) was used to follow the dopant depth profiles and the introduced disorder, the angular dependence of the backscattered ions (angular scans) in c-and a-plane GaN was measured to get insight into structural modification and dopant position in various crystallographic orientations. Defect-accumulation depth profiles exhibited differences for a-and c-plane GaN, with a-plane showing significantly lower accumulated disorder in the buried layer, accompanied by the shift of the maximum damage accumulation into the deeper layer with respect to the theoretical prediction, than c-plane GaN. Angular scans showed channelling preservation in as-implanted samples and better channelling recovery in the annealed a-plane GaN compared to c-plane GaN. The angular scan widths were simulated by FLUX code as well as the half-width modifications of angular scans were discussed in connection to the damage accumulation. Photoluminescence measurement followed in detail yellow band and band edge luminescence decline after the implantation and the recovery of luminescence spectra features after annealing.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10304 - Nuclear physics

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2019

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Thin Solid Films

ISSN

0040-6090

e-ISSN

—

Svazek periodika

680

Číslo periodika v rámci svazku

6

Stát vydavatele periodika

CH - Švýcarská konfederace

Počet stran výsledku

12

Strana od-do

102-113

Kód UT WoS článku

000467389900016

EID výsledku v databázi Scopus

2-s2.0-85065012318