Structural and optical properties of Gd implanted GaN with various crystallographic orientations

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F26722445%3A_____%2F17%3AN0000028" target="_blank" >RIV/26722445:_____/17:N0000028 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/67985882:_____/17:00479677 RIV/61389005:_____/17:00479677 RIV/60461373:22310/17:43913373 RIV/44555601:13440/17:43892900

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.tsf.2017.07.036" target="_blank" >http://dx.doi.org/10.1016/j.tsf.2017.07.036</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.tsf.2017.07.036" target="_blank" >10.1016/j.tsf.2017.07.036</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Structural and optical properties of Gd implanted GaN with various crystallographic orientations

Popis výsledku v původním jazyce

Structure, morphology, and optical properties of Gd implanted GaN epitaxial layers were studied for (0001), (11-20), and (11-22) orientations. The GaN layers grown by MOVPE on sapphire were subsequently implanted with 200 keV Gd+ ions using fluences of 5 x 10(15) and 5 x 10(16) cm(-2). Dopant depth profiling was accomplished by Rutherford Back-Scattering spectrometry (RBS). Structural and optical changes during subsequent annealing were characterized by RBS, Raman spectroscopy, and photoluminescence measurements. Post-implantation annealing induced a structural reorganization of GaN structure in the buried layer depending on the introduced disorder level, i.e. depending on the implantation fluence and on crystallographic orientation. The defect density depth distribution was evaluated by RBS. The surface morphology and optical properties depend on particular crystallographic orientation.

Název v anglickém jazyce

Structural and optical properties of Gd implanted GaN with various crystallographic orientations

Popis výsledku anglicky

Structure, morphology, and optical properties of Gd implanted GaN epitaxial layers were studied for (0001), (11-20), and (11-22) orientations. The GaN layers grown by MOVPE on sapphire were subsequently implanted with 200 keV Gd+ ions using fluences of 5 x 10(15) and 5 x 10(16) cm(-2). Dopant depth profiling was accomplished by Rutherford Back-Scattering spectrometry (RBS). Structural and optical changes during subsequent annealing were characterized by RBS, Raman spectroscopy, and photoluminescence measurements. Post-implantation annealing induced a structural reorganization of GaN structure in the buried layer depending on the introduced disorder level, i.e. depending on the implantation fluence and on crystallographic orientation. The defect density depth distribution was evaluated by RBS. The surface morphology and optical properties depend on particular crystallographic orientation.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20501 - Materials engineering

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2017

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Thin Solid Films

ISSN

0040-6090

e-ISSN

—

Svazek periodika

638

Číslo periodika v rámci svazku

September

Stát vydavatele periodika

CH - Švýcarská konfederace

Počet stran výsledku

10

Strana od-do

63-72

Kód UT WoS článku

000411775900009

EID výsledku v databázi Scopus

2-s2.0-85025099941