Structural and optical properties of vanadium ion-implanted GaN

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F26722445%3A_____%2F17%3AN0000027" target="_blank" >RIV/26722445:_____/17:N0000027 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/67985882:_____/17:00479636 RIV/61389005:_____/17:00479636 RIV/60461373:22310/17:43913399 RIV/44555601:13440/17:43892908

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.nimb.2017.01.010" target="_blank" >http://dx.doi.org/10.1016/j.nimb.2017.01.010</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.nimb.2017.01.010" target="_blank" >10.1016/j.nimb.2017.01.010</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Structural and optical properties of vanadium ion-implanted GaN

Popis výsledku v původním jazyce

The field of advanced electronic and optical devices searches for a new generation of transistors and lasers. The practical development of these novel devices depends on the availability of materials with the appropriate magnetic and optical properties, which is strongly connected to the internal morphology and the structural properties of the prepared doped structures. In this contribution, we present the characterisation of V ion-doped GaN epitaxial layers. GaN layers, oriented along the (0001) crystallographic direction, grown by low-pressure metal-organic vapour-phase epitaxy (MOVPE) on c-plane sapphire substrates were implanted with 400 keV V+ ions at fluences of 5 x 10(15) and 5 x 10(16) cm(-2). Elemental depth profiling was accomplished by Rutherford Backscattering Spectrometry (RBS) and Secondary Ion Mass Spectrometry (SIMS) to obtain precise information about the dopant distribution. Structural investigations are needed to understand the influence of defect distribution on the crystal-matrix recovery and the desired structural and optical properties. The structural properties of the ion-implanted layers were characterised by RBS-channelling and Raman spectroscopy to get a comprehensive insight into the structural modification of implanted GaN and to study the influence of subsequent annealing on the crystalline matrix reconstruction. Photoluminescence measurement was carried out to check the optical properties of the prepared structures.

Název v anglickém jazyce

Structural and optical properties of vanadium ion-implanted GaN

Popis výsledku anglicky

The field of advanced electronic and optical devices searches for a new generation of transistors and lasers. The practical development of these novel devices depends on the availability of materials with the appropriate magnetic and optical properties, which is strongly connected to the internal morphology and the structural properties of the prepared doped structures. In this contribution, we present the characterisation of V ion-doped GaN epitaxial layers. GaN layers, oriented along the (0001) crystallographic direction, grown by low-pressure metal-organic vapour-phase epitaxy (MOVPE) on c-plane sapphire substrates were implanted with 400 keV V+ ions at fluences of 5 x 10(15) and 5 x 10(16) cm(-2). Elemental depth profiling was accomplished by Rutherford Backscattering Spectrometry (RBS) and Secondary Ion Mass Spectrometry (SIMS) to obtain precise information about the dopant distribution. Structural investigations are needed to understand the influence of defect distribution on the crystal-matrix recovery and the desired structural and optical properties. The structural properties of the ion-implanted layers were characterised by RBS-channelling and Raman spectroscopy to get a comprehensive insight into the structural modification of implanted GaN and to study the influence of subsequent annealing on the crystalline matrix reconstruction. Photoluminescence measurement was carried out to check the optical properties of the prepared structures.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20305 - Nuclear related engineering; (nuclear physics to be 1.3);

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2017

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Nuclear Instruments and Methods in Physics Research Section B-Beam Interactions with Materials and Atoms

ISSN

0168-583X

e-ISSN

1872-9584

Svazek periodika

406

Číslo periodika v rámci svazku

September

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

5

Strana od-do

53-57

Kód UT WoS článku

000409152800012

EID výsledku v databázi Scopus

2-s2.0-85009754176