The structural and optical properties of metal ion-implanted GaN

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61389005%3A_____%2F16%3A00459130" target="_blank" >RIV/61389005:_____/16:00459130 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/44555601:13440/16:43887626

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.nimb.2015.10.015" target="_blank" >http://dx.doi.org/10.1016/j.nimb.2015.10.015</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.nimb.2015.10.015" target="_blank" >10.1016/j.nimb.2015.10.015</a>

Jazyk výsledku

angličtina

Název v původním jazyce

The structural and optical properties of metal ion-implanted GaN

Popis výsledku v původním jazyce

he practical development of novel optoelectronic materials with appropriate optical properties is strongly connected to the structural properties of the prepared doped structures. We present GaN layers oriented along the (0001) crystallographic direction that have been grown by low-pressure metal-organic vapour-phase epitaxy (MOVPE) on sapphire substrates implanted with 200 keV Co+, Fe+ and Ni+ ions. The structural properties of the ion-implanted layers have been characterised by RBS-channelling and Raman spectroscopy to obtain a comprehensive insight into the structural modification of implanted GaN layers and to study the subsequent influence of annealing on crystalline-matrix recovery. Photoluminescence was measured to control the desired optical properties. The post-implantation annealing induced the structural recovery of the modified GaN layer depending on the introduced disorder level, e.g. depending on the ion implantation fluence, which was followed by structural characterisation and by the study of the surface morphology by AFM.

Název v anglickém jazyce

The structural and optical properties of metal ion-implanted GaN

Popis výsledku anglicky

he practical development of novel optoelectronic materials with appropriate optical properties is strongly connected to the structural properties of the prepared doped structures. We present GaN layers oriented along the (0001) crystallographic direction that have been grown by low-pressure metal-organic vapour-phase epitaxy (MOVPE) on sapphire substrates implanted with 200 keV Co+, Fe+ and Ni+ ions. The structural properties of the ion-implanted layers have been characterised by RBS-channelling and Raman spectroscopy to obtain a comprehensive insight into the structural modification of implanted GaN layers and to study the subsequent influence of annealing on crystalline-matrix recovery. Photoluminescence was measured to control the desired optical properties. The post-implantation annealing induced the structural recovery of the modified GaN layer depending on the introduced disorder level, e.g. depending on the ion implantation fluence, which was followed by structural characterisation and by the study of the surface morphology by AFM.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BG - Jaderná, atomová a molekulová fyzika, urychlovače

OECD FORD obor

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Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2016

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Nuclear Instruments & Methods in Physics Research Section B

ISSN

0168-583X

e-ISSN

—

Svazek periodika

371

Číslo periodika v rámci svazku

MAR

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

4

Strana od-do

254-257

Kód UT WoS článku

000373412000049

EID výsledku v databázi Scopus

2-s2.0-84960349335