Structural study and ion-beam channelling in Si < 1 0 0 << modified by Kr , Ag- ,Ag- 2 and Au- ,Au- 2 ions

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F44555601%3A13440%2F18%3A43893790" target="_blank" >RIV/44555601:13440/18:43893790 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/61389005:_____/18:00493527 RIV/60461373:22310/18:43916955

Výsledek na webu

<a href="https://www.sciencedirect.com/science/article/pii/S0169433218320154" target="_blank" >https://www.sciencedirect.com/science/article/pii/S0169433218320154</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.apsusc.2018.07.118" target="_blank" >10.1016/j.apsusc.2018.07.118</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Structural study and ion-beam channelling in Si < 1 0 0 << modified by Kr , Ag- ,Ag- 2 and Au- ,Au- 2 ions

Popis výsledku v původním jazyce

A Si-crystal layer on SiO2/Si was irradiated using 0.4 MeV Kr+, Ag+, Au+ and 5.0 MeV Ag2+, Au2+ at ion fluences of 0.5 x 10(15)-5.0 x 10(15)cm(-2). The induced structural modification in a Si crystal strongly influences ion-beam channelling phenomena through the introduced point defects, damage accumulation and induced internal strain. He+ ion channelling in the ion-implanted Si structure was studied, simultaneously with the structure and surface-morphology characterization of Si-irradiated layers, in connection with the ion-implantation parameters and prevailing energy-stopping type. The dislocated atom-depth profiles in the Si layer and the Si sub-surface layer were extracted from Rutherford backscattering spectrometry in the channelling mode (RBS-C). RBS-C shows the density of gradually displaced atoms as a function of ion fluence and ion mass for 5.0-MeV-ion implantation. The relative disorder grows more progressively for Au-ion implantation, where the thicker disordered layer was also observed in connection to the higher density collision cascade comparing to Ag+ ions. This phenomenon was discussed in the frame of the structural RBS-C and surface morphological data from AFM. The axial channelling effect of He+ ions measured in the 5.0-MeV-ion-implanted Si layer is varying during 2.0-MeV-He+ channelling in consequences of the various implantation fluences. The narrowing of axial channels observed in RBS-C was correlated to the number of produced vacancies in the Si layer after ion implantation and compared to MC simulations performed by FLUX. Nanostructured surface morphology modification has been detected mainly in 0.4-MeV-implanted Si layers using atomic force microscopy (AFM) studies, where the nuclear stopping is a prevalent phenomenon. Fourier transformation infrared spectroscopy (FTIR) has shown SOI modification mainly done by Si rearrangement and modified by possible Si-O-Si bonds creation.

Název v anglickém jazyce

Structural study and ion-beam channelling in Si < 1 0 0 << modified by Kr , Ag- ,Ag- 2 and Au- ,Au- 2 ions

Popis výsledku anglicky

A Si-crystal layer on SiO2/Si was irradiated using 0.4 MeV Kr+, Ag+, Au+ and 5.0 MeV Ag2+, Au2+ at ion fluences of 0.5 x 10(15)-5.0 x 10(15)cm(-2). The induced structural modification in a Si crystal strongly influences ion-beam channelling phenomena through the introduced point defects, damage accumulation and induced internal strain. He+ ion channelling in the ion-implanted Si structure was studied, simultaneously with the structure and surface-morphology characterization of Si-irradiated layers, in connection with the ion-implantation parameters and prevailing energy-stopping type. The dislocated atom-depth profiles in the Si layer and the Si sub-surface layer were extracted from Rutherford backscattering spectrometry in the channelling mode (RBS-C). RBS-C shows the density of gradually displaced atoms as a function of ion fluence and ion mass for 5.0-MeV-ion implantation. The relative disorder grows more progressively for Au-ion implantation, where the thicker disordered layer was also observed in connection to the higher density collision cascade comparing to Ag+ ions. This phenomenon was discussed in the frame of the structural RBS-C and surface morphological data from AFM. The axial channelling effect of He+ ions measured in the 5.0-MeV-ion-implanted Si layer is varying during 2.0-MeV-He+ channelling in consequences of the various implantation fluences. The narrowing of axial channels observed in RBS-C was correlated to the number of produced vacancies in the Si layer after ion implantation and compared to MC simulations performed by FLUX. Nanostructured surface morphology modification has been detected mainly in 0.4-MeV-implanted Si layers using atomic force microscopy (AFM) studies, where the nuclear stopping is a prevalent phenomenon. Fourier transformation infrared spectroscopy (FTIR) has shown SOI modification mainly done by Si rearrangement and modified by possible Si-O-Si bonds creation.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10301 - Atomic, molecular and chemical physics (physics of atoms and molecules including collision, interaction with radiation, magnetic resonances, Mössbauer effect)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2018

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Applied Surface Science

ISSN

0169-4332

e-ISSN

—

Svazek periodika

2018

Číslo periodika v rámci svazku

458

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

12

Strana od-do

722-733

Kód UT WoS článku

000441400000084

EID výsledku v databázi Scopus

2-s2.0-85050561521