Structural damage and ion-channelling effects in a single-crystal Si layer modified by medium-heavy ions

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61389005%3A_____%2F18%3A00496726" target="_blank" >RIV/61389005:_____/18:00496726 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/67985882:_____/18:00496726

Výsledek na webu

<a href="http://dx.doi.org/10.1002/sia.6492" target="_blank" >http://dx.doi.org/10.1002/sia.6492</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1002/sia.6492" target="_blank" >10.1002/sia.6492</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Structural damage and ion-channelling effects in a single-crystal Si layer modified by medium-heavy ions

Popis výsledku v původním jazyce

Structural modification after medium-heavy ion irradiation was characterised by Rutherford backscattering spectrometry in the channelling mode (RBS-C) for silicon-on-insulator (SOI) material. Silicon on insulator was irradiated using C+, 2(+), N+, 2(+), and O+, 2(+) ions at fluences of 1 x 10(14) and 1 x 10(15) cm(-2) and energies of 0.4, 3, and 5 MeV to follow the interplay of electronic and nuclear stopping and its influence on damage accumulation. The relative amount of displaced atoms in the surface-irradiated layer was extracted from RBS-C spectra and used, along with axial channel analysis, to study ion-channelling effects in the modified crystalline lattice. The discussion of ion penetration through the modified crystalline layer of the SOI structure in channelling direction was supported by a Monte Carlo simulation (FLUX code) of He ion flux maps in a gradually modified Si crystalline upper layer taking into account the experimentally determined relative disorder extracted from RBS-C. nnThe RBS-C measurement shows an increase of the relative amount of displaced atoms mainly after irradiation using 0.4-MeV ions at an ion fluence of 1 x 10(15) cm(-2). The narrowing effect of channels for He ion-beam channelling experiment was observed in the irradiated silicon layers and discussed in connection with the irradiation parameters. The FLUX simulation, provided with the experimentally given value of the displaced atoms, has confirmed that it is not only the vacancies that can cause such a narrowing effect of the angular scan. The angular scan narrowing can be explained for predominately electronic stopping by induced crystalline-cell modification.

Název v anglickém jazyce

Structural damage and ion-channelling effects in a single-crystal Si layer modified by medium-heavy ions

Popis výsledku anglicky

Structural modification after medium-heavy ion irradiation was characterised by Rutherford backscattering spectrometry in the channelling mode (RBS-C) for silicon-on-insulator (SOI) material. Silicon on insulator was irradiated using C+, 2(+), N+, 2(+), and O+, 2(+) ions at fluences of 1 x 10(14) and 1 x 10(15) cm(-2) and energies of 0.4, 3, and 5 MeV to follow the interplay of electronic and nuclear stopping and its influence on damage accumulation. The relative amount of displaced atoms in the surface-irradiated layer was extracted from RBS-C spectra and used, along with axial channel analysis, to study ion-channelling effects in the modified crystalline lattice. The discussion of ion penetration through the modified crystalline layer of the SOI structure in channelling direction was supported by a Monte Carlo simulation (FLUX code) of He ion flux maps in a gradually modified Si crystalline upper layer taking into account the experimentally determined relative disorder extracted from RBS-C. nnThe RBS-C measurement shows an increase of the relative amount of displaced atoms mainly after irradiation using 0.4-MeV ions at an ion fluence of 1 x 10(15) cm(-2). The narrowing effect of channels for He ion-beam channelling experiment was observed in the irradiated silicon layers and discussed in connection with the irradiation parameters. The FLUX simulation, provided with the experimentally given value of the displaced atoms, has confirmed that it is not only the vacancies that can cause such a narrowing effect of the angular scan. The angular scan narrowing can be explained for predominately electronic stopping by induced crystalline-cell modification.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10304 - Nuclear physics

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2018

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Surface and Interface Analysis

ISSN

0142-2421

e-ISSN

—

Svazek periodika

50

Číslo periodika v rámci svazku

11

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

7

Strana od-do

1243-1249

Kód UT WoS článku

000448889600049

EID výsledku v databázi Scopus

2-s2.0-85050581054