Recoil and charged particle energy spectra from the natSi(n,x) reaction and the Si semiconductor detector response to the 14 MeV neutrons

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61389005%3A_____%2F23%3A00566556" target="_blank" >RIV/61389005:_____/23:00566556 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/26722445:_____/23:N0000068

Výsledek na webu

<a href="https://doi.org/10.1016/j.radphyschem.2022.110624" target="_blank" >https://doi.org/10.1016/j.radphyschem.2022.110624</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.radphyschem.2022.110624" target="_blank" >10.1016/j.radphyschem.2022.110624</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Recoil and charged particle energy spectra from the natSi(n,x) reaction and the Si semiconductor detector response to the 14 MeV neutrons

Popis výsledku v původním jazyce

The energy spectra of light and heavy charged particles generated by the 14 MeV neutrons in silicon nuclei and in the Si semiconductor detector (SSD) were analysed. The existing measurements were used to validate the cor-responding energy differential cross sections from major evaluations ENDF/B-VIII.0 and JEFF-3.3. The required data were extracted by the various codes: NJOY21, SPKA and MCNP6. It was shown that both evaluations un-derestimate the high energy part of the 28Si(n,x)p-and alpha-particle spectra by <= 50%, whereas at smaller emission energies no experimental data even exist. The calculation of the atom displacement damage in SSD reveals that the secondary protons produce additionally approximate to 15% of damage, whereas the contribution from secondary alphas is impossible to estimate since the Si(alpha,x) recoil data are not available. The single experiment, carried out by K. Yageta and co-workers in 1988, reported the energy spectra in the Si semiconductor down to the rather low energy of approximate to 0.3 MeV, at which the production of reaction recoils domi-nates over the light ions. The Monte Carlo simulation of this experiment was performed by MCNP6. The gen-eration and transport of all relevant ions were taken in account. The energy depositions from protons or alphas were summed with their associated recoils after correction for non-ionization losses. The neutron reactions in the dead layer of the SSD were shown to increase the counts in active layer by (1-20)% depending on sort of ions. The impact of the field funneling effect was studied. Consideration of all these underlying processes has even-tually allowed a reasonable reproduction of this experiment.

Název v anglickém jazyce

Recoil and charged particle energy spectra from the natSi(n,x) reaction and the Si semiconductor detector response to the 14 MeV neutrons

Popis výsledku anglicky

The energy spectra of light and heavy charged particles generated by the 14 MeV neutrons in silicon nuclei and in the Si semiconductor detector (SSD) were analysed. The existing measurements were used to validate the cor-responding energy differential cross sections from major evaluations ENDF/B-VIII.0 and JEFF-3.3. The required data were extracted by the various codes: NJOY21, SPKA and MCNP6. It was shown that both evaluations un-derestimate the high energy part of the 28Si(n,x)p-and alpha-particle spectra by <= 50%, whereas at smaller emission energies no experimental data even exist. The calculation of the atom displacement damage in SSD reveals that the secondary protons produce additionally approximate to 15% of damage, whereas the contribution from secondary alphas is impossible to estimate since the Si(alpha,x) recoil data are not available. The single experiment, carried out by K. Yageta and co-workers in 1988, reported the energy spectra in the Si semiconductor down to the rather low energy of approximate to 0.3 MeV, at which the production of reaction recoils domi-nates over the light ions. The Monte Carlo simulation of this experiment was performed by MCNP6. The gen-eration and transport of all relevant ions were taken in account. The energy depositions from protons or alphas were summed with their associated recoils after correction for non-ionization losses. The neutron reactions in the dead layer of the SSD were shown to increase the counts in active layer by (1-20)% depending on sort of ions. The impact of the field funneling effect was studied. Consideration of all these underlying processes has even-tually allowed a reasonable reproduction of this experiment.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20305 - Nuclear related engineering; (nuclear physics to be 1.3);

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2023

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Radiation Physics and Chemistry

ISSN

0969-806X

e-ISSN

1879-0895

Svazek periodika

203

Číslo periodika v rámci svazku

FEB

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

13

Strana od-do

110624

Kód UT WoS článku

000895769800008

EID výsledku v databázi Scopus

2-s2.0-85141278663