Digital pixel test structures implemented in a 65 nm CMOS process

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61389005%3A_____%2F23%3A00582691" target="_blank" >RIV/61389005:_____/23:00582691 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1016/j.nima.2023.168589" target="_blank" >https://doi.org/10.1016/j.nima.2023.168589</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.nima.2023.168589" target="_blank" >10.1016/j.nima.2023.168589</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Digital pixel test structures implemented in a 65 nm CMOS process

Popis výsledku v původním jazyce

The ALICE ITS3 (Inner Tracking System 3) upgrade project and the CERN EP R&D on monolithic pixel sensors are investigating the feasibility of the Tower Partners Semiconductor Co. 65 nm process for use in the next generation of vertex detectors. The ITS3 aims to employ wafer-scale Monolithic Active Pixel Sensors thinned down to 20–40 µm and bent to form truly cylindrical half barrels. Among the first critical steps towards the realisation of this detector is to validate the sensor technology through extensive characterisation both in the laboratory and with in-beam measurements. The Digital Pixel Test Structure (DPTS) is one of the prototypes produced in the first sensor submission in this technology and has undergone a systematic measurement campaign whose details are presented in this article. The results confirm the goals of detection efficiency and non-ionising and ionising radiation hardness up to the expected levels for ALICE ITS3 and also demonstrate operation at ＋20 °C and a detection efficiency of 99% for a DPTS irradiated with a dose of 1015 1 MeV neq cm-2. Furthermore, spatial, timing and energy resolutions were measured at various settings and irradiation levels.

Název v anglickém jazyce

Digital pixel test structures implemented in a 65 nm CMOS process

Popis výsledku anglicky

The ALICE ITS3 (Inner Tracking System 3) upgrade project and the CERN EP R&D on monolithic pixel sensors are investigating the feasibility of the Tower Partners Semiconductor Co. 65 nm process for use in the next generation of vertex detectors. The ITS3 aims to employ wafer-scale Monolithic Active Pixel Sensors thinned down to 20–40 µm and bent to form truly cylindrical half barrels. Among the first critical steps towards the realisation of this detector is to validate the sensor technology through extensive characterisation both in the laboratory and with in-beam measurements. The Digital Pixel Test Structure (DPTS) is one of the prototypes produced in the first sensor submission in this technology and has undergone a systematic measurement campaign whose details are presented in this article. The results confirm the goals of detection efficiency and non-ionising and ionising radiation hardness up to the expected levels for ALICE ITS3 and also demonstrate operation at ＋20 °C and a detection efficiency of 99% for a DPTS irradiated with a dose of 1015 1 MeV neq cm-2. Furthermore, spatial, timing and energy resolutions were measured at various settings and irradiation levels.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10304 - Nuclear physics

Projekt

<a href="/cs/project/LM2023040" target="_blank" >LM2023040: Výzkumná infrastruktura pro experimenty v CERN</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2023

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Nuclear Instruments & Methods in Physics Research Section A

ISSN

0168-9002

e-ISSN

1872-9576

Svazek periodika

1056

Číslo periodika v rámci svazku

NOV

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

13

Strana od-do

168589

Kód UT WoS článku

001155138600001

EID výsledku v databázi Scopus

2-s2.0-85171618072