RESUTS OF INTERACTION OF XUV LASER PULSES OF NANOSECOND DURATION WITH DIFFICULT-ABLATED-MATERIALS
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61389021%3A_____%2F16%3A00473160" target="_blank" >RIV/61389021:_____/16:00473160 - isvavai.cz</a>
Výsledek na webu
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DOI - Digital Object Identifier
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Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
RESUTS OF INTERACTION OF XUV LASER PULSES OF NANOSECOND DURATION WITH DIFFICULT-ABLATED-MATERIALS
Popis výsledku v původním jazyce
Summary form only given. It is well known that each photon of extreme ultraviolet (XUV) radiation carries energy higher than 20 eV, what is more than any binding energy in a solid state. Provided that energy of these photons is deposited in some localized volume (for example in a surface layer - which is true for XUV and soft X-rays) a non-thermal melting can appear1. This contribution presents experimental results of interaction of focused pulsed XUV laser (λ 47 nm/ 1.5 ns/150-350 μJ) radiation with tungsten (W), molybdenum (Mo), and silicon carbide (SiC) - three materials considered as perspective armour for plasma facing components in future thermonuclear reactors. It was found that W and Mo behave similarly: during the first shot the laser footprint is covered by melted and re-solidified material, in which circular holes appear - residua of just opened pores, from which explosively escaped pressurized (up to atmospheric pressure) air. The W has tendency to peel off its surface layer: semidetached chip is then more intensely heated (due to locally reduced thermal conductivity) and rounded. The SiC has negligible porosity, and at melting point it de-composes to elements; therefore, the crater morphology can be related to local laser-energy-density above ablation threshold. When more shots are superimposed, in all three investigated materials the crater depth remarkably increases up to 10 accumulated shots, between 10 and 20 accumulated shots this increase is slowed down, and above 20 it is very small.
Název v anglickém jazyce
RESUTS OF INTERACTION OF XUV LASER PULSES OF NANOSECOND DURATION WITH DIFFICULT-ABLATED-MATERIALS
Popis výsledku anglicky
Summary form only given. It is well known that each photon of extreme ultraviolet (XUV) radiation carries energy higher than 20 eV, what is more than any binding energy in a solid state. Provided that energy of these photons is deposited in some localized volume (for example in a surface layer - which is true for XUV and soft X-rays) a non-thermal melting can appear1. This contribution presents experimental results of interaction of focused pulsed XUV laser (λ 47 nm/ 1.5 ns/150-350 μJ) radiation with tungsten (W), molybdenum (Mo), and silicon carbide (SiC) - three materials considered as perspective armour for plasma facing components in future thermonuclear reactors. It was found that W and Mo behave similarly: during the first shot the laser footprint is covered by melted and re-solidified material, in which circular holes appear - residua of just opened pores, from which explosively escaped pressurized (up to atmospheric pressure) air. The W has tendency to peel off its surface layer: semidetached chip is then more intensely heated (due to locally reduced thermal conductivity) and rounded. The SiC has negligible porosity, and at melting point it de-composes to elements; therefore, the crater morphology can be related to local laser-energy-density above ablation threshold. When more shots are superimposed, in all three investigated materials the crater depth remarkably increases up to 10 accumulated shots, between 10 and 20 accumulated shots this increase is slowed down, and above 20 it is very small.
Klasifikace
Druh
O - Ostatní výsledky
CEP obor
BL - Fyzika plasmatu a výboje v plynech
OECD FORD obor
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Návaznosti výsledku
Projekt
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Návaznosti
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Ostatní
Rok uplatnění
2016
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů